Electron effective mass enhancement in Ga(AsBi) alloys probed by cyclotron resonance spectroscopy

2016 ◽  
Vol 94 (23) ◽  
Author(s):  
G. Pettinari ◽  
O. Drachenko ◽  
R. B. Lewis ◽  
T. Tiedje
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Resonance Spectroscopy ◽  
Electron Effective Mass ◽  
Mass Enhancement

Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy

2015 ◽  
Vol 107 (6) ◽  
pp. 062103 ◽  
Author(s):  
F. Eßer ◽  
O. Drachenko ◽  
A. Patanè ◽  
M. Ozerov ◽  
S. Winnerl ◽  
...  
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Direct Determination ◽  
Resonance Spectroscopy ◽  
Electron Effective Mass

Determination of electron effective mass in InN by cyclotron resonance spectroscopy

2019 ◽  
Vol 136 ◽  
pp. 106318 ◽  
Author(s):  
Xianfa Fang ◽  
Feipeng Zheng ◽  
Oleksiy Drachenko ◽  
Shengqiang Zhou ◽  
Xiantong Zheng ◽  
...  
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Resonance Spectroscopy ◽  
Electron Effective Mass

Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures

1988 ◽  
Vol 53 (25) ◽  
pp. 2510-2512 ◽  
Author(s):  
C. T. Liu ◽  
S. Y. Lin ◽  
D. C. Tsui ◽  
H. Lee ◽  
D. Ackley
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Electron Effective Mass

Conductivity Measurements on GaN Grown by OMVPE and HVPE

1995 ◽  
Vol 395 ◽  
Author(s):  
M. Ben-Chorin ◽  
J. Diener ◽  
B.K. Meyer ◽  
M. Drechsler ◽  
D. Volm ◽  
...  
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Epitaxial Films ◽  
Precise Determination ◽  
Conductivity Measurements ◽  
Electron Effective Mass ◽  
Thermally Activated ◽  
Mass Approximation ◽  
Donor Binding Energy

ABSTRACTWe report on conductance and cyclotron resonance (CR) experiments on GaN epitaxial films grown by the OMVPE and HVPE techniques. From a precise determination of the electron effective mass the donor binding energy in the effective mass approximation (EMT) is calculated. We obtain 31.7 meV. The transport experiments on the HVPE films show that the conductance is thermally activated with an activation energy of 15 meV in contrast to the OMVPE films which showed temperature independent conductivity for temperatures between 4 and 100 K.

Cyclotron resonance over a wide temperature range, II. Silicon

1961 ◽  
Vol 262 (1310) ◽  
pp. 365-378 ◽  
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Mass Parameter ◽  
Impurity Scattering ◽  
Resonant Scattering ◽  
Systematic Investigation ◽  
Attractive Potential ◽  
Electron Effective Mass ◽  
Temperature Range ◽  
Cyclotron Line

A systematic investigation of cyclotron resonance in silicon has been carried out at 8*8 mm wavelength throughout the temperature range 2 to 120 °K. Typical expressions for the reciprocal collision times derived from the width of the cyclotron resonance lines in high purity material are: light- and heavy-mass hole τ − 1 = 0.15 × 10 11 + 6 × 10 7 T 2 s − 1 ; electrons τ − 1 = 0.15 × 10 11 + 6 × 10 7 T 2 s − 1 . The acoustic lattice wave scattering is in good agreement with the corresponding mobility data, but measurements with samples having a range of impurity concentrations indicate that ionized impurity scattering does not contribute significantly to the cyclotron line width even when it has a very marked effect upon the mobility. There is an anomaly in the collision time for electrons at about 50 °K which can be explained in terms of resonant scattering from a deep attractive potential well. This anomaly is very similar to that found previously in germanium. The magnitude of the anomaly is greater in samples containing large concentrations of oxygen but it is not directly related to the total number of oxygen impurities. At low temperatures the residual scattering for both holes and electrons appears to arise from neutral scattering sites. These measurements do not indicate any temperature dependence in the effective mass parameters for holes up to 50 °K and for electrons up to 100 °K. There is, however, a small discrepancy between the present results and the previously quoted values for the electron effective mass parameter in the <100> direction.

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