S=12triangular-lattice antiferromagnetsBa3CoSb2O9andCsCuCl3: Role of spin-orbit coupling, crystalline electric field effect, and Dzyaloshinskii-Moriya interaction

2016 ◽  
Vol 94 (21) ◽  
Author(s):  
A. Sera ◽  
Y. Kousaka ◽  
J. Akimitsu ◽  
M. Sera ◽  
T. Kawamata ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Orbit Coupling ◽  
Electric Field Effect ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Crystalline Electric Field ◽  
Moriya Interaction

scholarly journals Dzyaloshinskii–Moriya interaction in noncentrosymmetric superlattices

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Woo Seung Ham ◽  
Abdul-Muizz Pradipto ◽  
Kay Yakushiji ◽  
Kwangsu Kim ◽  
Sonny H. Rhim ◽  
...  
Keyword(s):  
Heavy Metal ◽  
Degrees Of Freedom ◽  
Orbit Coupling ◽  
Inversion Symmetry ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Band Formation ◽  
Research Activities ◽  
Moriya Interaction

AbstractDzyaloshinskii–Moriya interaction (DMI) is considered as one of the most important energies for specific chiral textures such as magnetic skyrmions. The keys of generating DMI are the absence of structural inversion symmetry and exchange energy with spin–orbit coupling. Therefore, a vast majority of research activities about DMI are mainly limited to heavy metal/ferromagnet bilayer systems, only focusing on their interfaces. Here, we report an asymmetric band formation in a superlattices (SL) which arises from inversion symmetry breaking in stacking order of atomic layers, implying the role of bulk-like contribution. Such bulk DMI is more than 300% larger than simple sum of interfacial contribution. Moreover, the asymmetric band is largely affected by strong spin–orbit coupling, showing crucial role of a heavy metal even in the non-interfacial origin of DMI. Our work provides more degrees of freedom to design chiral magnets for spintronics applications.

Matrix Elements of the Spin–Orbit Coupling for an ln Configuration in a Crystalline Electric Field

1972 ◽  
Vol 50 (2) ◽  
pp. 78-83 ◽  
Author(s):  
H. A. Buckmaster ◽  
R. Chatterjee ◽  
Y. H. Shing
Keyword(s):  
Electric Field ◽  
General Expression ◽  
Ground State ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Matrix Elements ◽  
Crystalline Electric Field ◽  
State Splitting ◽  
The Matrix

A general expression for the matrix elements of the spin–orbit coupling for an ln configuration in a crystalline electric field of arbitrary symmetry is derived using Racah formalism. This calculation is an extension of Lulek's treatment of this problem for an l1 configuration. This general expression is used to calculate the contribution to the ground-state splitting for the S-state lanthanide ion Gd3+ (4f7; 8S7/2)in an axial crystalline electric field of a second-order perturbation mechanism involving the matrix element of the spin–orbit coupling. It is shown that this mechanism, which was proposed by Lulek is incapable of explaining the observed ground-state splitting.

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

Antiferromagnetism and Crystalline Electric Field Effect of Ce2Pt3Si5

2008 ◽  
Vol 77 (12) ◽  
pp. 124707 ◽  
Author(s):  
Yuji Muro ◽  
Masayuki Nakano ◽  
Kiyoichiro Motoya
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Electric Field Effect ◽  
Crystalline Electric Field

The role of the spin-orbit coupling strength in the MO effects of magnetic insulators

2001 ◽  
Vol 37 (4) ◽  
pp. 2411-2413 ◽  
Author(s):  
You Xu ◽  
Jiehui Yang ◽  
Xijuan Zhang ◽  
Fang Zhang ◽  
M. Guillot
Keyword(s):  
Coupling Strength ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Magnetic Insulators

Plasmon modes in N-layer silicene structures

2021 ◽  
Author(s):  
Men Nguyen Van
Keyword(s):  
Electric Field ◽  
Random Phase ◽  
Single Layer ◽  
Plasmon Mode ◽  
Orbit Coupling ◽  
Collective Excitations ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Number Of Layers ◽  
Plasmon Modes

Abstract We investigate the plasmon properties in N-layer silicene systems consisting of N, up to 6, parallel single-layer silicene under the application of an out-of-plane electric field, taking into account the spin-orbit coupling within the random-phase approximation. Numerical calculations demonstrate that N undamped plasmon modes, including one in-phase optical and (N-1) out-of-phase acoustic modes, continue mainly outside the single-particle excitation area of the system. As the number of layers increases, the frequencies of plasmonic collective excitations increase and can become much larger than that in single layer silicene, more significant for high-frequency modes. The optical (acoustic) plasmon mode(s) noticeably (slightly) decreases with the increase in the bandgap and weakly depends on the number of layers. We observe that the phase transition of the system weakly affects the plasmon properties, and as the bandgap caused by the spin-orbit coupling equal that caused by the external electric field, the plasmonic collective excitations and their broadening function in multilayer silicene behave similarly to those in multilayer gapless graphene structures. Our investigations show that plasmon curves in the system move toward that in single layer silicene as the separation increases, and the impacts of this factor can be raised by a large number of layers in the system. Finally, we find that the imbalanced carrier density between silicene layers significantly decreases plasmon frequencies, depending on the number of layers.

Electronic and optical correlation effects in bulk gold: Role of spin–orbit coupling

2019 ◽  
Vol 18 ◽  
pp. e00360
Author(s):  
H.A. Alluhaybi ◽  
S.K. Ghoshal ◽  
B.O. Alsobhi ◽  
W.N. Wan Shamsuri
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Correlation Effects ◽  
Optical Correlation ◽  
Bulk Gold
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