scholarly journals Epsilon-near-zero behavior from plasmonic Dirac point: Theory and realization using two-dimensional materials

2016 ◽  
Vol 94 (20) ◽  
Author(s):  
Marios Mattheakis ◽  
Constantinos A. Valagiannopoulos ◽  
Efthimios Kaxiras
Keyword(s):  
Dirac Point ◽  
Point Theory ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Epsilon Near Zero

Strain-induced metal-semimetal transition of BeB2 monolayer

RSC Advances ◽  
2015 ◽  
Vol 5 (15) ◽  
pp. 11392-11396 ◽  
Author(s):  
Yuewen Mu ◽  
Feng Ding ◽  
Haigang Lu
Keyword(s):  
Charge Transport ◽  
Dirac Point ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
High Carrier

The Dirac point and cones make some two-dimensional materials (e.g., graphene, silicone and graphyne) exhibit ballistic charge transport and enormously high carrier mobilities.

Redox-Active Approach Towards New Magnetic And Conductive Two-Dimensional Materials

2018 ◽  
Author(s):  
Penny Perlepe ◽  
Rodolphe Clérac ◽  
Itziar Oyarzabal ◽  
Corine Mathonière
Keyword(s):  
Two Dimensional ◽  
Active Approach ◽  
Redox Active ◽  
Two Dimensional Materials

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Two-Dimensional Materials with Giant Optical Nonlinearities near the Theoretical Upper Limit

ACS Nano ◽  
2021 ◽  
Vol 15 (4) ◽  
pp. 7155-7167
Author(s):  
Alireza Taghizadeh ◽  
Kristian S. Thygesen ◽  
Thomas G. Pedersen
Keyword(s):  
Optical Nonlinearities ◽  
Two Dimensional ◽  
Upper Limit ◽  
Two Dimensional Materials
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