scholarly journals Direct observation of anisotropic magnetic field response of the spin helix in FeGe thin films

2016 ◽  
Vol 94 (18) ◽  
Author(s):  
N. Kanazawa ◽  
J. S. White ◽  
H. M. Rønnow ◽  
C. D. Dewhurst ◽  
Y. Fujishiro ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Direct Observation ◽  
Field Response

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

Direct observation of the structure of nickel oxide electrochromic thin films by HRTEM

1995 ◽  
Author(s):  
Kazuki Yoshimura ◽  
Takeshi Miki ◽  
Sakae Tanemura
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Direct Observation

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Low temperature micro-Raman measurements under magnetic field of thin films

2007 ◽  
Vol 310 (2) ◽  
pp. 2164-2166 ◽  
Author(s):  
A. Antonakos ◽  
D. Lampakis ◽  
D. Palles ◽  
E. Liarokapis ◽  
W. Prellier ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Low Temperature

MAGNETIC RESISTIVITY IN Bi2Sr2Ca(Cu1-xCox)2Od EPITAXIAL THIN FILMS

2007 ◽  
Vol 21 (01) ◽  
pp. 127-132
Author(s):  
T. R. YANG ◽  
G. ILONCA ◽  
V. TOMA ◽  
P. BALINT ◽  
M. BODEA
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Activation Energy ◽  
Glass Transition ◽  
Effective Activation Energy ◽  
Epitaxial Thin Films ◽  
Effective Activation ◽  
High Quality ◽  
Plastic Deformations ◽  
Magnetic Resistivity

The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μoH)=Uo(1-T/T c )mHn with exponent m=1.25±0.03, n=-1/2 and the field scaling 1/μoH and -UμoH for thick films and ultra thin films, respectively. The results are discussed taking into account of the influence of the Co substitution with a model in which U(T, H) arises from plastic deformations of the viscous flux liquid above the vortex-glass transition temperature.

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