Magnetic and nonmagnetic doping dependence of the conducting surface states inSmB6

2016 ◽  
Vol 94 (16) ◽  
Author(s):  
B. Y. Kang ◽  
Chul-Hee Min ◽  
S. S. Lee ◽  
M. S. Song ◽  
K. K. Cho ◽  
...  
Keyword(s):  
Surface States ◽  
Conducting Surface ◽  
Doping Dependence

scholarly journals Device Applications of Synthetic Topological Insulator Nanostructures

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 225 ◽  
Author(s):  
Chenxi Yue ◽  
Shuye Jiang ◽  
Hao Zhu ◽  
Lin Chen ◽  
Qingqing Sun ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Condensed Matter ◽  
Electronic Devices ◽  
Surface States ◽  
Volume Ratio ◽  
Conducting Surface ◽  
New Class ◽  
Research Fields ◽  
Quantum Matter ◽  
Device Applications

This review briefly describes the development of synthetic topological insulator materials in the application of advanced electronic devices. As a new class of quantum matter, topological insulators with insulating bulk and conducting surface states have attracted attention in more and more research fields other than condensed matter physics due to their intrinsic physical properties, which provides an excellent basis for novel nanoelectronic, optoelectronic, and spintronic device applications. In comparison to the mechanically exfoliated samples, the newly emerging topological insulator nanostructures prepared with various synthetical approaches are more intriguing because the conduction contribution of the surface states can be significantly enhanced due to the larger surface-to-volume ratio, better manifesting the unique properties of the gapless surface states. So far, these synthetic topological insulator nanostructures have been implemented in different electrically accessible device platforms via electrical, magnetic and optical characterizations for material investigations and device applications, which will be introduced in this review.

Ultrathin Topological Insulator Absorber: Unique Dielectric Behavior of Bi2Te3 Nanosheets Based on Conducting Surface States

2019 ◽  
Vol 11 (36) ◽  
pp. 33285-33291 ◽  
Author(s):  
Min Tang ◽  
Jun-Ying Zhang ◽  
Song Bi ◽  
Zhi-Ling Hou ◽  
Xiao-Hong Shao ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Surface States ◽  
Dielectric Behavior ◽  
Conducting Surface

scholarly journals Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb2Se3

2018 ◽  
Vol 97 (23) ◽  
Author(s):  
Shekhar Das ◽  
Anshu Sirohi ◽  
Gaurav Kumar Gupta ◽  
Suman Kamboj ◽  
Aastha Vasdev ◽  
...  
Keyword(s):  
Surface States ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Conducting Surface ◽  
Spin Polarized ◽  
Strong Spin

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

Reflection properties of electromagnetic waves from a moving conducting surface

2014 ◽  
Author(s):  
Lei Kuang ◽  
Wenchao Xu ◽  
Shouzheng Zhu ◽  
Zhengqi Zheng ◽  
Danan Dong
Keyword(s):  
Electromagnetic Waves ◽  
Conducting Surface

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

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