scholarly journals Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

2016 ◽  
Vol 94 (15) ◽  
Author(s):  
Pierre Corfdir ◽  
Hanno Küpers ◽  
Ryan B. Lewis ◽  
Timur Flissikowski ◽  
Holger T. Grahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Core Shell ◽  
Exciton Dynamics ◽  
Shell Nanowires

Crystal Phase Quantum Dots in the Ultrathin Core of GaAs–AlGaAs Core–Shell Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (11) ◽  
pp. 7544-7551 ◽  
Author(s):  
Bernhard Loitsch ◽  
Julia Winnerl ◽  
Gianluca Grimaldi ◽  
Jakob Wierzbowski ◽  
Daniel Rudolph ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Crystal Phase ◽  
Core Shell ◽  
Shell Nanowires

scholarly journals Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires

2014 ◽  
Vol 90 (7) ◽  
Author(s):  
Yannik Fontana ◽  
Pierre Corfdir ◽  
Barbara Van Hattem ◽  
Eleonora Russo-Averchi ◽  
Martin Heiss ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Core Shell ◽  
Self Assembled ◽  
Shell Nanowires

Optical Properties and Exciton Dynamics of Alloyed Core/Shell/Shell Cd1–xZnxSe/ZnSe/ZnS Quantum Dots

2013 ◽  
Vol 5 (8) ◽  
pp. 2893-2900 ◽  
Author(s):  
Bob C. Fitzmorris ◽  
Ying-Chih Pu ◽  
Jason K. Cooper ◽  
Yi-Fang Lin ◽  
Yung-Jung Hsu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Core Shell ◽  
Exciton Dynamics

Influence of core-shell interfaces on exciton and multi-exciton dynamics of CdSe-CdxZn1-xS quantum dots

2014 ◽  
Author(s):  
Alessandro Minotto ◽  
Francesco Todescato ◽  
Raffaella Signorini ◽  
Jacek J. Jasieniak ◽  
Renato Bozio
Keyword(s):  
Quantum Dots ◽  
Core Shell ◽  
Exciton Dynamics

scholarly journals Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

2016 ◽  
Vol 109 (14) ◽  
pp. 143113 ◽  
Author(s):  
Matthias Brauns ◽  
Joost Ridderbos ◽  
Ang Li ◽  
Wilfred G. van der Wiel ◽  
Erik P. A. M. Bakkers ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Core Shell ◽  
Shell Nanowires

scholarly journals Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

2015 ◽  
Vol 107 (3) ◽  
pp. 033106 ◽  
Author(s):  
Luca Francaviglia ◽  
Yannik Fontana ◽  
Sonia Conesa-Boj ◽  
Gözde Tütüncüoglu ◽  
Léo Duchêne ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Shell Thickness ◽  
Core Shell ◽  
Shell Nanowires

scholarly journals Modeling of the growth of GaAs–AlGaAs core–shell nanowires

2017 ◽  
Vol 8 ◽  
pp. 506-513 ◽  
Author(s):  
Qian Zhang ◽  
Peter W Voorhees ◽  
Stephen H Davis
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Morphological Evolution ◽  
Shell Morphology ◽  
Core Shell ◽  
Attachment Rate ◽  
Wire Cross Section ◽  
The Difference ◽  
Facet Size ◽  
Shell Nanowires

Heterostructured GaAs–AlGaAs core–shell nanowires with have attracted much attention because of their significant advantages and great potential for creating high performance nanophotonics and nanoelectronics. The spontaneous formation of Al-rich stripes along certain crystallographic directions and quantum dots near the apexes of the shell are observed in AlGaAs shells. Controlling the formation of these core–shell heterostructures remains challenging. A two-dimensional model valid on the wire cross section, that accounts for capillarity in the faceted surface limit and deposition has been developed for the evolution of the shell morphology and concentration in Al x Ga1− x As alloys. The model includes a completely faceted shell–vapor interface. The objective is to understand the mechanisms of the formation of the radial heterostructures (Al-rich stripes and Al-poor quantum dots) in the nanowire shell. There are two issues that need to be understood. One is the mechanism responsible for the morphological evolution of the shells. Analysis and simulation results suggest that deposition introduces facets not present on the equilibrium Wulff shapes. A balance between diffusion and deposition yields the small facets with sizes varying slowly over time, which yield stripe structures, whereas deposition-dominated growth can lead to quantum-dot structures observed in experiments. There is no self-limiting facet size in this case. The other issue is the mechanism responsible for the segregation of Al atoms in the shells. It is found that the mobility difference of the atoms on the {112} and {110} facets together determine the non-uniform concentration of the atoms in the shell. In particular, even though the mobility of Al on {110} facets is smaller than that of Ga, Al-rich stripes are predicted to form along the {112} facets when the difference of the mobilities of Al and Ga atoms is sufficiently large on {112} facets. As the size of the shell increases, deposition becomes more important. The Al-poor dots are obtained at the apices of {112} facets, if the attachment rate of Al atoms is smaller there.

Study of nanometer-scale structures and electrostatic properties of InAs quantum dots decorating GaAs/AlAs core/shell nanowires

2020 ◽  
Vol 31 (24) ◽  
pp. 245701
Author(s):  
Tianyu Qi ◽  
Yongfa Cheng ◽  
Feng Cheng ◽  
Luying Li ◽  
Chen Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanometer Scale ◽  
Core Shell ◽  
Inas Quantum Dots ◽  
Electrostatic Properties ◽  
Scale Structures ◽  
Shell Nanowires
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