scholarly journals Dynamical calculation of third-harmonic generation in a semiconductor quantum well

2016 ◽  
Vol 94 (11) ◽  
Author(s):  
Stefano Guazzotti ◽  
Andreas Pusch ◽  
Doris E. Reiter ◽  
Ortwin Hess
Keyword(s):  
Quantum Well ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
Dynamical Calculation ◽  
Semiconductor Quantum Well

Third-Harmonic Generation in Special Parabolic Quantum Wells

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu
Keyword(s):  
Quantum Well ◽  
Density Matrix ◽  
Quantum Wells ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Asymmetric Quantum ◽  
Parabolic Quantum Wells

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

Simultaneous effects of hydrostatic pressure, temperature and aluminum concentration on nonlinear optical rectification, second- and third-harmonic generation in a GaAs/Ga1−xAlxAs morse quantum well

2019 ◽  
Vol 33 (04) ◽  
pp. 1950009 ◽  
Author(s):  
Jun-Sheng Li ◽  
Zhi-Hai Zhang ◽  
You-Wen Liu ◽  
Jian-Hui Yuan
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Great Influence ◽  
Third Harmonic Generation ◽  
Aluminum Concentration ◽  
Optical Rectification ◽  
Third Harmonic ◽  
Nonlinear Optical Rectification

In this work, the simultaneous effects of aluminum concentration, hydrostatic pressure and temperature on the nonlinear optical rectification (OR), second- and third-harmonic generation (SHG and THG) in a GaAs/Ga[Formula: see text]Al[Formula: see text]As morse quantum well (QW) are studied. The expressions of OR, SHG and THG in morse QW were derived with the use of the compact-density-matrix approach and iterative method. The simultaneous effects of aluminum concentration, hydrostatic pressure and temperature on the effective mass have been taken into account. It is found that (1) the presence of the aluminum concentration, hydrostatic pressure and temperature have a great influence on the symmetry of the system, the nonlinear OR, SHG and THG. (2) the variation of the resonant peaks of the OR and SHG shows complicated behavior as the temperature changes. (3) the temperature effect is weaker than the aluminum concentration and hydrostatic pressure effects on the nonlinear OR, SHG and THG. The influences of different parameters of GaAs/Ga[Formula: see text]Al[Formula: see text]As morse QW and applied field strengths on the nonlinear OR, SHG and THG are discussed.

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