scholarly journals Spontaneous appearance of a low-dimensional magnetic electron system on semiconductor nanostructures

2016 ◽  
Vol 93 (23) ◽  
Author(s):  
Keisuke Sawada ◽  
Jun-Ichi Iwata ◽  
Atsushi Oshiyama
Keyword(s):  
Electron System ◽  
Semiconductor Nanostructures ◽  
Low Dimensional ◽  
Magnetic Electron

Fascinating World of Nanomaterials, Applications and Technology Hurdles in Commercial Production

2009 ◽  
Vol 1209 ◽  
Author(s):  
Shiva Hullavarad ◽  
Nilima Hullavarad
Keyword(s):  
Quantum Confinement ◽  
Building Blocks ◽  
Semiconductor Nanostructures ◽  
Commercial Production ◽  
Scientific Field ◽  
Bohr Radius ◽  
Semiconducting Nanowires ◽  
Size Dependent ◽  
Low Dimensional ◽  
De Broglie Wavelength

AbstractNanoparticles, nanowires, nanorods and other kinds of nanostructures have been of great interest to scientific field. Semiconducting nanowires have attracted much attention due to the fact that reduced dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale optoelectronic devices, highly quantum efficient lasers and non-linear optical converters. It is generally accepted that the low dimensional structures (where the size in one direction is equivalent to or smaller than the de Broglie wavelength) are useful materials for investigating the dependence of electrical and thermal transport or mechanical properties on the dimensionality and quantum confinement. Nanomaterials also play an important role as functional units in fabricating the electromechanical devices. Semiconductor nanostructures of different materials and shapes are investigated due to their size dependent electronic properties observable at dimensions comparable to or less than Bohr radius of exciton in these materials. Especially various oxides and sulphides have generated interests in variety of applications. In this paper, the recent progress in various nanostructures, paradigms in implementation and technology hurdles in implementing nanostructures are discussed

scholarly journals Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Yasuhisa Omura
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Threshold Voltage ◽  
Mathematical Formulation ◽  
Electron System ◽  
Band Model ◽  
Dimensional Electron ◽  
Dimensional Electron System ◽  
Low Dimensional ◽  
Band Nonparabolicity

This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.

Spin currents in semiconductor nanostructures: A non-equilibrium Green-function approach

2017 ◽  
Author(s):  
Branislav K. Nikolic ◽  
Liviu P. Zarbo ◽  
Satofumi Souma
Keyword(s):  
Green Function ◽  
Spin Current ◽  
Semiconductor Nanostructures ◽  
Pure Spin ◽  
Current Operator ◽  
Spin Orbit ◽  
Spin Currents ◽  
Low Dimensional ◽  
Green Function Approach ◽  
Non Equilibrium

This article examines spin currents and spin densities in realistic open semiconductor nanostructures using different tools of quantum-transport theory based on the non-equilibrium Green function (NEGF) approach. It begins with an introduction to the essential theoretical formalism and practical computational techniques before explaining what pure spin current is and how pure spin currents can be generated and detected. It then considers the spin-Hall effect (SHE), and especially the mesoscopic SHE, along with spin-orbit couplings in low-dimensional semiconductors. It also describes spin-current operator, spindensity, and spin accumulation in the presence of intrinsic spin-orbit couplings, as well as the NEGF approach to spin transport in multiterminal spin-orbit-coupled nanostructures. The article concludes by reviewing formal developments with examples drawn from the field of the mesoscopic SHE in low-dimensional spin-orbit-coupled semiconductor nanostructures.

Flexible low-dimensional semiconductor field emission cathodes: fabrication, properties and applications

2017 ◽  
Vol 5 (41) ◽  
pp. 10682-10700 ◽  
Author(s):  
Shanliang Chen ◽  
Weiyou Yang
Keyword(s):  
Field Emission ◽  
Semiconductor Nanostructures ◽  
Low Dimensional ◽  
Field Emission Cathodes

We present an overview on the fabrication, properties, and applications of flexible field emission cathodes based on low-dimensional semiconductor nanostructures.

Sign in / Sign up

Export Citation Format

Share Document