scholarly journals Dislocations in stacking and commensurate-incommensurate phase transition in bilayer graphene and hexagonal boron nitride

2016 ◽  
Vol 93 (23) ◽  
Author(s):  
Irina V. Lebedeva ◽  
Alexander V. Lebedev ◽  
Andrey M. Popov ◽  
Andrey A. Knizhnik
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Incommensurate Phase

scholarly journals Evidence of Orbital Ferromagnetism in Twisted Bilayer Graphene Aligned to Hexagonal Boron Nitride

Nano Letters ◽  
2021 ◽  
Author(s):  
Aaron L. Sharpe ◽  
Eli J. Fox ◽  
Arthur W. Barnard ◽  
Joe Finney ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Twisted Bilayer Graphene

Hydrothermal hot-pressing induced phase transition in hexagonal boron nitride

2009 ◽  
Vol 11 (7) ◽  
pp. 1283-1287 ◽  
Author(s):  
Lingling Zhu ◽  
Miao Tan ◽  
Gang Lian ◽  
Xiao Zhang ◽  
Deliang Cui ◽  
...  
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Hot Pressing ◽  
Hexagonal Boron Nitride

First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Yiheng Chen ◽  
Wen-Ti Guo ◽  
Zi-si Chen ◽  
Suyun Wang ◽  
Jian-Min Zhang
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Charge Density ◽  
First Principles ◽  
Sandwich Structure ◽  
Hexagonal Boron Nitride ◽  
Mulliken Population ◽  
Metal Insulator ◽  
Insulator Phase Transition ◽  
Twisted Graphene

Abstract In recent years, the discovery of "magic angle" graphene has given new inspiration to the formation of heterojunctions. Similarly, the use of hexagonal boron nitride, known as white graphene, as a substrate for graphene devices has more aroused great interest in the graphene/hexagonal boron nitride (G/hBN) heterostructure system. Based on the first principles method of density functional theory, the band structure, density of states, Mulliken population, and differential charge density of a tightly packed model of twisted graphene/hexagonal boron nitride/graphene (G/hBN/G) sandwich structure have been studied. Through the establishment of heterostructure models TBG inserting hBN with different twisted angles, it was found that the band gap, Mulliken population, and charge density, exhibited specific evolution regulars with the rotation angle of the upper graphene, showing novel electronic properties and realizing metal-insulator phase transition. We find that the particular value of the twist angle at which the metal-insulator phase transition occurs and propose a rotational regulation mechanism with angular periodicity. Our results have guiding significance for the practical application of heterojunction electronic devices.

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

2015 ◽  
Vol 36 (4) ◽  
pp. 405-407 ◽  
Author(s):  
Sangwoo Kang ◽  
Babak Fallahazad ◽  
Kayoung Lee ◽  
Hema Movva ◽  
Kyounghwan Kim ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Negative Differential Resistance ◽  
Hexagonal Boron Nitride ◽  
Differential Resistance ◽  
Bilayer Graphene ◽  
Tunnel Fet

Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices

2020 ◽  
Vol 13 (3) ◽  
pp. 035003
Author(s):  
Takuya Iwasaki ◽  
Yoshifumi Morita ◽  
Shu Nakaharai ◽  
Yutaka Wakayama ◽  
Eiichiro Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Nitride Superlattices

Interactions of Hexagonal Boron Nitride with the Insulator-Metal Phase Transition of Vanadium Dioxide

2018 ◽  
Author(s):  
Samuel T. White ◽  
Alireza Fali ◽  
Thomas G. Folland ◽  
Joshua D. Caldwell ◽  
Yohannes Abate ◽  
...  
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Vanadium Dioxide ◽  
Hexagonal Boron Nitride ◽  
Metal Phase ◽  
Metal Phase Transition

scholarly journals Band structure of twisted bilayer graphene on hexagonal boron nitride

2020 ◽  
Vol 102 (15) ◽  
Author(s):  
Tommaso Cea ◽  
Pierre A. Pantaleón ◽  
Francisco Guinea
Keyword(s):  
Boron Nitride ◽  
Band Structure ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Twisted Bilayer Graphene

Interplay of orbital hopping and perpendicular magnetic field in anisotropic phase transitions for Bernal bilayer graphene and hexagonal boron-nitride

2019 ◽  
Vol 21 (1) ◽  
pp. 238-245 ◽  
Author(s):  
P. T. T. Le ◽  
M. Davoudiniya ◽  
M. Yarmohammadi
Keyword(s):  
Magnetic Field ◽  
Phase Transitions ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Perpendicular Magnetic Field ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Electronic Phase ◽  
Anisotropic Phase

We theoretically address the perpendicular magnetic field effects on the orbital electronic phase of Bernal bilayer graphene and hexagonal boron-nitride (h-BN).

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