scholarly journals Electron and phonon drag in thermoelectric transport through coherent molecular conductors

2016 ◽  
Vol 93 (20) ◽  
Author(s):  
Jing-Tao Lü ◽  
Jian-Sheng Wang ◽  
Per Hedegård ◽  
Mads Brandbyge
Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3364
Author(s):  
Gennady M. Gusev ◽  
Ze D. Kvon ◽  
Alexander D. Levin ◽  
Nikolay N. Mikhailov

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.


2021 ◽  
Vol 104 (11) ◽  
Author(s):  
Xitong Xu ◽  
Yiyuan Liu ◽  
Gabriel Seyfarth ◽  
Alexandre Pourret ◽  
Wenlong Ma ◽  
...  

1977 ◽  
Vol 32 (8) ◽  
pp. 813-817
Author(s):  
D. Roloff ◽  
G. Simon

Abstract The system of coupled Boltzmann transport equations for electrons and phonons in a metal is considered in the absence of a magnetic field. Usually these equations are decoupled by “Bloch′s assumption”, that is the phonon gas is considered to stay in equilibrium with respect to the trans­ port equation for the electrons. It is shown that the coupled system of equations has finite solutions only if some other relaxation process than the electron-phonon interaction is present, for instance the phonon-phonon-interaction. With some simplifying assumptions the full system of equations is solved for high temperatures. The contributions of the phonon-drag to the thermoelectric transport coefficients are derived and discussed.


2019 ◽  
Author(s):  
Xuegao Hu ◽  
Wenke He ◽  
Dongyang Wang ◽  
Zhiwei Huang ◽  
Li-Dong Zhao

2021 ◽  
pp. 138302
Author(s):  
Štěpánka Nováková Lachmanová ◽  
František Vavrek ◽  
Táňa Sebechlebská ◽  
Viliam Kolivoška ◽  
Michal Valášek ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 386
Author(s):  
Magali Allain ◽  
Cécile Mézière ◽  
Pascale Auban-Senzier ◽  
Narcis Avarvari

Tetramethyl-tetraselenafulvalene (TMTSF) and bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) are flagship precursors in the field of molecular (super)conductors. The electrocrystallization of these donors in the presence of (n-Bu4N)TaF6 or mixtures of (n-Bu4N)TaF6 and (n-Bu4N)PF6 provided Bechgaard salts formulated as (TMTSF)2(TaF6)0.84(PF6)0.16, (TMTSF)2(TaF6)0.56(PF6)0.44, (TMTSF)2(TaF6)0.44(PF6)0.56 and (TMTSF)2(TaF6)0.12(PF6)0.88, together with the monoclinic and orthorhombic phases δm-(BEDT-TTF)2(TaF6)0.94(PF6)0.06 and δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57, respectively. The use of BEDT-TTF and a mixture of (n-Bu4N)TaF6/TaF5 afforded the 1:1 phase (BEDT-TTF)2(TaF6)2·CH2Cl2. The precise Ta/P ratio in the alloys has been determined by an accurate single crystal X-ray data analysis and was corroborated with solution 19F NMR measurements. In the previously unknown crystalline phase (BEDT-TTF)2(TaF6)2·CH2Cl2 the donors organize in dimers interacting laterally yet no organic-inorganic segregation is observed. Single crystal resistivity measurements on the TMTSF based materials show typical behavior of the Bechgaard phases with room temperature conductivity σ ≈ 100 S/cm and localization below 12 K indicative of a spin density wave transition. The orthorhombic phase δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57 is semiconducting with the room temperature conductivity estimated to be σ ≈ 0.16–0.5 S/cm while the compound (BEDT-TTF)2(TaF6)2·CH2Cl2 is also a semiconductor, yet with a much lower room temperature conductivity value of 0.001 to 0.0025 S/cm, in agreement with the +1 oxidation state and strong dimerization of the donors.


Author(s):  
Qingyu Bai ◽  
Xinyue Zhang ◽  
Bing Shan ◽  
Xuemin Shi ◽  
Cheng Sun ◽  
...  

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