Minority carrier blocking to enhance the thermoelectric figure of merit in narrow-band-gap semiconductors

2016 ◽  
Vol 93 (16) ◽  
Author(s):  
Je-Hyeong Bahk ◽  
Ali Shakouri
Keyword(s):  
Band Gap ◽  
Figure Of Merit ◽  
Minority Carrier ◽  
Narrow Band ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Narrow Band Gap Semiconductors

scholarly journals New insight into the material parameter B to understand the enhanced thermoelectric performance of Mg2Sn1−x−yGexSby

2016 ◽  
Vol 9 (2) ◽  
pp. 530-539 ◽  
Author(s):  
Weishu Liu ◽  
Jiawei Zhou ◽  
Qing Jie ◽  
Yang Li ◽  
Hee Seok Kim ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Gap ◽  
Figure Of Merit ◽  
Material Parameter ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Insight Into

A new generalized material parameterB*, connecting weighted mobility, lattice thermal conductivity, and also the band gap, provides a new insight in pursuing high thermoelectric figure-of-meritZT.

scholarly journals First Principles Study of Thermoelectric Properties of Skutterudites: Ir4Sb12 and Ca0.04Ir4Sb12

2020 ◽  
Vol 6 (2) ◽  
pp. 1-9
Author(s):  
B. Bhattarai ◽  
T. Dahal ◽  
N. P. Adhikari
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Density Of States ◽  
First Principles ◽  
Figure Of Merit ◽  
Density Functional ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Metallic Behavior ◽  
Maximum Value

First – principles calculations to study thermal and electrical properties of pristine and calcium filled skutterudite Ir4Sb12 has been carried out. Density of states (DOS) and band-structure calculations are based on Density Functional Theory (DFT) within Generalized Gradient Approximation (GGA). Transport properties are calculated using BoltzTrap software packages. Volume optimization is carried out on the basis of Murnaghan equation of states. The optimized lattice parameter of pristine Ir4Sb12 is found to be 9.4243 Å and that of calcium filled Ir4Sb12 is found to be 9.4949 Å. Our calculation shows that pristine Ir4Sb12 is a p-type of semiconductor with a narrow PBE-GGA band gap of 0.25 eV. After filling calcium, the band gap is reduced to zero showing the metallic behavior of filled compound. Band structure, density of states, variations of electrical and thermal conductivities with temperature and Seebeck coefficient show that calcium filled Ir4Sb12 has a metallic character. At Fermi level, the maximum value of thermoelectric figure of merit of unfilled Ir4Sb12 compound at temperature 400K is found to be 0.5. At the same temperature thermoelectric figure of merit calcium filled Ca0.04Ir4Sb12 is found to be around 0.03. The maximum value of of Ca filled Ca0.04Ir4Sb12 at 1000K is computed around 0.1.

Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

2021 ◽  
Author(s):  
Enamul Haque
Keyword(s):  
Fermi Level ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4

2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Co Substitution

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.

Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

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