scholarly journals Electron-phonon cooling in large monolayer graphene devices

2016 ◽  
Vol 93 (7) ◽  
Author(s):  
Christopher B. McKitterick ◽  
Daniel E. Prober ◽  
Michael J. Rooks
Keyword(s):  
Monolayer Graphene ◽  
Graphene Devices

scholarly journals Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 206
Author(s):  
Honghwi Park ◽  
Junyeong Lee ◽  
Chang-Ju Lee ◽  
Jaewoon Kang ◽  
Jiyeong Yun ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Sheet Resistance ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Cumulative Distribution ◽  
Monolayer Graphene ◽  
Single Crystalline ◽  
Average Grain Size ◽  
Graphene Devices

The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.

scholarly journals Extraordinary magnetoresistance in encapsulated monolayer graphene devices

2020 ◽  
Vol 116 (5) ◽  
pp. 053102
Author(s):  
Bowen Zhou ◽  
K. Watanabe ◽  
T. Taniguchi ◽  
E. A. Henriksen
Keyword(s):  
Monolayer Graphene ◽  
Extraordinary Magnetoresistance ◽  
Graphene Devices

scholarly journals Progress on Waveguide-Integrated Graphene Optoelectronics

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Jiaqi Wang ◽  
Zhenzhou Cheng ◽  
Xuejin Li
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
Hexagonal Lattice ◽  
Single Layer ◽  
Atomic Layer ◽  
Monolayer Graphene ◽  
Basic Principles ◽  
Silicon Photonic ◽  
Graphene Devices

Graphene, a single layer of carbon atoms arranged in the form of hexagonal lattice, has many intriguing optical and electrical properties. However, due to the atomic layer thickness, light-matter interactions in the monolayer graphene are naturally weak when the light is normally incident to the material. To overcome this challenge, waveguide-integrated graphene optoelectronic devices have been proposed and demonstrated. In such coplanar configurations, the propagating light in the waveguide can significantly interact with the graphene layer integrated on the surface of the waveguide. The combination of photonic integrated circuits and graphene also enables the development of graphene devices by using silicon photonic technology, which greatly extends the scope of graphene’s application. Moreover, the waveguide-integrated graphene devices are fully CMOS-compatible, which makes it possible to achieve low-cost and high-density integration in the future. As a result, the area has been attracting more and more attention in recent years. In this paper, we introduce basic principles and research advances of waveguide-integrated graphene optoelectronics.

Comb-Shaped Graphene Nanoribbon Bandpass Filter

2020 ◽  
Vol 20 (12) ◽  
pp. 7577-7582
Author(s):  
Guangsheng Deng ◽  
Tianxiang Zhao ◽  
Zhiping Yin ◽  
Ying Li ◽  
Jun Yang
Keyword(s):  
Finite Difference Time Domain ◽  
Bandpass Filter ◽  
Chemical Potential ◽  
Graphene Nanoribbon ◽  
Frequency Region ◽  
Monolayer Graphene ◽  
Transmission Spectra ◽  
All Optical ◽  
Graphene Devices ◽  
Difference Time

In this study, a novel comb-shaped graphene nanoribbon wideband bandpass filter for use at midinfrared frequencies is proposed. In addition, numerical investigation was carried outwith finite difference time-domain (FDTD) numerical simulations. The filter includes one graphene nanoribbon (GNR) waveguide laterally coupled to six perpendicular GNRs on each side. With a simple geometric shape, the transmission bandwidth and efficiency of waves within the structure can be tuned by altering the width or length of the GNR teeth. Moreover, the transmission spectra can be easily tuned within a broad frequency region by tuning the chemical potential of the graphene teeth, thanks to the electronic tunability of monolayer graphene. This work offers a promising method for developing ultra-compact tunable graphene devices and for designing integrated all-optical architectures.

scholarly journals Patterning and tuning of electrical and optical properties of graphene by laser induced two-photon oxidation

Nanoscale ◽  
2015 ◽  
Vol 7 (7) ◽  
pp. 2851-2855 ◽  
Author(s):  
Jukka Aumanen ◽  
Andreas Johansson ◽  
Juha Koivistoinen ◽  
Pasi Myllyperkiö ◽  
Mika Pettersson
Keyword(s):  
Optical Properties ◽  
Monolayer Graphene ◽  
Optical Fabrication ◽  
Electrical And Optical Properties ◽  
Two Photon ◽  
Graphene Devices

Laser-induced two-photon oxidation modifies locally the electrical and optical properties of monolayer graphene allowing optical fabrication of all-graphene devices.

Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

2011 ◽  
Vol 1283 ◽  
Author(s):  
Shinichi Tanabe ◽  
Yoshiaki Sekine ◽  
Hiroyuki Kageshima ◽  
Masao Nagase ◽  
Hiroki Hibino
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Bilayer Graphene ◽  
Monolayer Graphene ◽  
Strong Temperature Dependence ◽  
Electronic Transport Properties ◽  
Integer Quantum Hall Effect ◽  
Gap Opening ◽  
Integer Quantum ◽  
Graphene Devices

ABSTRACTWe studied the electronic transport properties of monolayer and bilayer graphene in top-gated geometries. Monolayer and bilayer graphene were epitaxially grown by thermal decomposition of SiC. The half-integer quantum Hall effect under the gated environment was observed in monolayer graphene devices. The mobility of the monolayer and bilayer graphene devices showed distinct characteristics as a function of carrier density, which reflect their electronic structures. Strong temperature dependence at the charge neutrality point was observed in bilayer graphene devices, suggesting band gap opening.

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