scholarly journals Evolution of damping in ferromagnetic/nonmagnetic thin film bilayers as a function of nonmagnetic layer thickness

2016 ◽  
Vol 93 (5) ◽  
Author(s):  
S. Azzawi ◽  
A. Ganguly ◽  
M. Tokaç ◽  
R. M. Rowan-Robinson ◽  
J. Sinha ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Nonmagnetic Layer

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Layer Thickness ◽  
Perovskite Phase ◽  
Frequency Dispersion ◽  
Dead Layer ◽  
Parameter Ratio ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (1 1 1)

2019 ◽  
Vol 473 ◽  
pp. 348-354 ◽  
Author(s):  
Burcu Toydemir Yasasun ◽  
Aykut Can Onel ◽  
Ilknur Gunduz Aykac ◽  
Mehmet Ali Gulgun ◽  
Leyla Colakerol Arslan
Keyword(s):  
Thin Film ◽  
Layer Thickness

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation

Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors

2001 ◽  
Vol 78 (12) ◽  
pp. 1724-1726 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Dead Layer ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
Au Thin Film

A Two-Phase, Transient Model for the Cathode of a PEMFC Using Thin Film-Agglomerate Approach

2006 ◽  
Author(s):  
Hsin-Sen Chu ◽  
Shih-Ming Chang
Keyword(s):  
Thin Film ◽  
Steady State ◽  
Layer Thickness ◽  
Catalyst Layer ◽  
Critical Value ◽  
Gas Diffusion ◽  
Water Proton ◽  
Gaseous Species ◽  
Two Phase ◽  
Effect Of Water

This study presents a transient, one-dimensional, and two phase model of the proton exchange membrane fuel cell cathode. A thin film-agglomerate approach is applied to the catalyst layer. The model includes the transport of gaseous species, liquid water, proton, and electrochemical kinetics. The effect of water flooding both in the gas diffusion layer and catalyst layer in the cathode are investigated. The effects of agglomerate radius and the catalyst layer thickness on the overall cell performance are also investigated. The results show that the time for fuel cells to reach the steady state is in the order of 10 sec due to the effect of water accumulated both in the porous layer and the membrane. However the time for proton transport is in the order of 0.1 sec. In addition, before the ionic potential reaches the steady state, it would get a critical value. The critical value would depend on the operating cell voltage. There seems to be an optimum in the catalyst layer thickness and agglomerate radius.

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