scholarly journals Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy

2016 ◽  
Vol 93 (4) ◽  
Author(s):  
P. S. Sokolov ◽  
M. Yu. Petrov ◽  
T. Mehrtens ◽  
K. Müller-Caspary ◽  
A. Rosenauer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Quadrupole Interaction ◽  
Nuclear Quadrupole Interaction ◽  
Transmission Electron ◽  
Nuclear Quadrupole

AQUEOUS SYNTHESIS OF HIGH QUANTUM YIELD AND MONODISPERSED THIOL-CAPPED CdxZn1-xTe QUANTUM DOTS BASED ON ELECTROCHEMICAL METHOD

NANO ◽  
2012 ◽  
Vol 07 (02) ◽  
pp. 1250011 ◽  
Author(s):  
JUNWEI LI ◽  
YANG JIANG ◽  
YUGANG ZHANG ◽  
DI WU ◽  
ANQI LUO ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Quantum Yield ◽  
Electrochemical Method ◽  
Large Scale ◽  
Ostwald Ripening ◽  
Visible Absorption ◽  
Aqueous Synthesis ◽  
Transmission Electron

A facile green approach has been developed to control the growth regime in the aqueous synthesis of CdxZn1-xTe semiconductor quantum dots (QDs) based on the electrochemistry method. The Low growth temperature and slow injection of Te precursor are used to prolong the diffusion controlled stage and thus suppress Ostwald ripening during the nanocrystal growth. The experimental results showed that a low concentration of Te precursor will definitely influence the growth procedure. The UV–visible absorption spectra, as well as transmission electron microscopy (TEM) shows the QDs a good monodispersity at any interval of the reaction procedure. The high-resolution transmission electron microscopy (HRTEM) images and powder X-ray diffraction (XRD) pattern suggested that the as-prepared QDs have high crystallinity and cubic structure. The size and composition-dependent fluorescent emission wavelength of the resultant CdxZn1-xTe alloyed QDs can be tuned from 460 to 610 nm, and their photoluminescent quantum yield can reach up to 70%. Especially in the wavelength range of 510–578 nm, the overall PL QYs of the as-prepared CdxZn1-xTe QDs were above 50%. The current work suggests that electrochemical method is an attractive approach to the synthesis of high-quality II-VI ternary alloyed semiconductor QDs at large-scale with a prominent cost advantage.

Optical properties and energy transfer processes in Tb3+-doped ZnSe quantum dots

2021 ◽  
Author(s):  
Nguyen Ca ◽  
N. D Vinh ◽  
Phan Van Do ◽  
N. T. Hien ◽  
Xuan Hoa Vu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Chemical Method ◽  
X Ray Diffraction ◽  
Wet Chemical Method ◽  
X Ray ◽  
Transfer Processes ◽  
Transmission Electron ◽  
Wet Chemical

Tb3+-doped ZnSe quantum dots (QDs) with Tb content in the range of 0.5 - 7% were successfully synthesized by a wet chemical method. X-ray diffraction (XRD) and transmission electron microscopy...

Microstructure characteristics of non-monodisperse quantum dots: on the potential of transmission electron microscopy combined with X-ray diffraction

CrystEngComm ◽  
2020 ◽  
Vol 22 (21) ◽  
pp. 3644-3655
Author(s):  
Stefan Neumann ◽  
Christina Menter ◽  
Ahmed Salaheldin Mahmoud ◽  
Doris Segets ◽  
David Rafaja
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Cdse Quantum Dots ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure Characteristics ◽  
Scale Bridging ◽  
Transmission Electron ◽  
Hot Injection

Capability of TEM and XRD to reveal scale-bridging information about the microstructure of non-monodisperse quantum dots is illustrated on the CdSe quantum dots synthesized using an automated hot-injection method.

Microstructures and Growth Characteristics of Self-Assembled InAs/GaAs Quantum Dots Investigated by Transmission Electron Microscopy

2007 ◽  
Vol 26-28 ◽  
pp. 1207-1210
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park ◽  
Sang Jun Lee ◽  
Sam Kyu Noh ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Chemical Potential ◽  
Early Stage ◽  
Compressive Strain ◽  
Potential Gradient ◽  
Growth Direction ◽  
Transmission Electron ◽  
Self Assembled

The microstructure and strain characteristics of self-assembled InAs/GaAs quantum dots (QDs) were studied by using transmission electron microscopy. Compressive strain was induced to uncapped QDs from GaAs substrate and the misfit strain largely increased after the deposition of GaAs cap layer. Tensile strain outside QD was extended along the vertical growth direction; up to 15 nm above the wetting layer. Vertically nonaligned and aligned stacked QDs were grown by adjusting the thickness of GaAs spacer layers. The QDs with a lens-shaped morphology were formed in the early stage of growth, and their apex was flattened by the out-diffusion of In atoms upon GaAs capping. However, aligned QDs maintained their lens-shaped structure with round apex after capping. It is believed that their apex did not flatten because the chemical potential gradient of In was relatively low due to the adjacent InAs QD layers.

Sign in / Sign up

Export Citation Format

Share Document