scholarly journals Gate-voltage induced trions in suspended carbon nanotubes

2016 ◽  
Vol 93 (4) ◽  
Author(s):  
M. Yoshida ◽  
A. Popert ◽  
Y. K. Kato
Keyword(s):  
Carbon Nanotubes ◽  
Gate Voltage

Hydrogenated carbon nanotube-based spin caloritronics

2017 ◽  
Vol 19 (32) ◽  
pp. 21507-21513 ◽  
Author(s):  
Hong-Li Zeng ◽  
Yan-Dong Guo ◽  
Xiao-Hong Yan ◽  
Jie Zhou
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Electric Field ◽  
Gate Voltage ◽  
Seebeck Effect ◽  
Partial Hydrogenation ◽  
Spin Caloritronics ◽  
Spin Seebeck Effect ◽  
Or Gate

The spin-Seebeck effect (SSE) in linearly hydrogenated carbon nanotubes (CNTs) is realized, where partial hydrogenation makes CNTs acquire magnetism. Moreover, an odd–even effect of the SSE is observed, and the even cases could be used as spin-Seebeck diodes, without the need for an electric field or gate voltage.

Random Telegraph Noise in Individual Single-walled Carbon Nanotubes

2004 ◽  
Vol 858 ◽  
Author(s):  
SungHo Jhang ◽  
SangWook Lee ◽  
DongSu Lee ◽  
Eleanor E. B. Campbell ◽  
Siegmar Roth ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Inelastic Scattering ◽  
Gate Voltage ◽  
Single Walled Carbon Nanotubes ◽  
Random Telegraph Noise ◽  
Single Walled Carbon ◽  
Telegraph Noise ◽  
Different Types ◽  
Discrete Values ◽  
Walled Carbon Nanotubes

ABSTRACTThe switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature. By analyzing the features of the RTN, we identify three different types of RTN existing in the SWNT related systems. While the RTN can be generated by the various charge traps in the vicinity of the SWNTs, the RTN for metallic SWNTs is mainly due to reversible defect motions between two metastable states, activated by inelastic scattering with electrons.

Gate Voltage Controllable Non-Equilibrium and Non-Ohmic Behavior in Suspended Carbon Nanotubes

Nano Letters ◽  
2009 ◽  
Vol 9 (8) ◽  
pp. 2862-2866 ◽  
Author(s):  
Adam W. Bushmaker ◽  
Vikram V. Deshpande ◽  
Scott Hsieh ◽  
Marc W. Bockrath ◽  
Stephen B. Cronin
Keyword(s):  
Carbon Nanotubes ◽  
Gate Voltage ◽  
Ohmic Behavior ◽  
Non Equilibrium

Structural phenomena in the growth of carbon nanotubes

1993 ◽  
Vol 51 ◽  
pp. 750-751
Author(s):  
Jun Jiao
Keyword(s):  
Carbon Nanotubes ◽  
Growth Mechanism ◽  
Carbonaceous Material ◽  
Cluster Growth ◽  
Structural Elements ◽  
Rich Variety ◽  
Different Shapes ◽  
Point To Point

HREM studies of the carbonaceous material deposited on the cathode of a Huffman-Krätschmer arc reactor have shown a rich variety of multiple-walled nano-clusters of different shapes and forms. The preparation of the samples, as well as the variety of cluster shapes, including triangular, rhombohedral and pentagonal projections, are described elsewhere.The close registry imposed on the nanotubes, focuses attention on the cluster growth mechanism. The strict parallelism in the graphitic separation of the tube walls is maintained through changes of form and size, often leading to 180° turns, and accommodating neighboring clusters and defects. Iijima et. al. have proposed a growth scheme in terms of pentagonal and heptagonal defects and their combinations in a hexagonal graphitic matrix, the first bending the surface inward, and the second outward. We report here HREM observations that support Iijima’s suggestions, and add some new features that refine the interpretation of the growth mechanism. The structural elements of our observations are briefly summarized in the following four micrographs, taken in a Hitachi H-8100 TEM operating at an accelerating voltage of 200 kV and with a point-to-point resolution of 0.20 nm.

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