scholarly journals Effect of atomic-scale defects and dopants on phosphorene electronic structure and quantum transport properties

2016 ◽  
Vol 93 (3) ◽  
Author(s):  
Alejandro Lopez-Bezanilla
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Quantum Transport ◽  
Atomic Scale

Electronic structure and quantum transport properties of boron and nitrogen substituted graphene monolayers

2017 ◽  
Vol 17 (7) ◽  
pp. 957-961 ◽  
Author(s):  
Puspitapallab Chaudhuri ◽  
Angsula Ghosh ◽  
M.S. Gusmão ◽  
C. Mota ◽  
H.O. Frota
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Quantum Transport

Artificially Atomic-scale Ordered Superlattice Alloys for Thermoelectric Applications

2000 ◽  
Vol 626 ◽  
Author(s):  
S. Cho ◽  
Y. Kim ◽  
A. DiVenere ◽  
G. K. L. Wong ◽  
A. J. Freeman ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electronic Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Structural Modification ◽  
Atomic Scale ◽  
Thermoelectric Transport ◽  
Transport Measurements ◽  
Thermoelectric Transport Properties ◽  
Superlattice Period

ABSTRACTWe report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-ZT materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.

Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride

Nanoscale ◽  
2012 ◽  
Vol 4 (17) ◽  
pp. 5490 ◽  
Author(s):  
Xiaoliang Zhong ◽  
Rodrigo G. Amorim ◽  
Ralph H. Scheicher ◽  
Ravindra Pandey ◽  
Shashi P. Karna
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Transport Properties ◽  
Quantum Transport

How Small Is Too Small ? Understanding The Electronic Structure Of Atomic-Scale Transistors

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Electronic Devices ◽  
Local Environment ◽  
Gate Oxide ◽  
Atomic Scale ◽  
Gate Oxides ◽  
Bulk Properties ◽  
Commercial Use

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.

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