Electronic structure in a one-Fe Brillouin zone of the iron pnictide superconductorsCsFe2As2andRbFe2As2

2015 ◽  
Vol 92 (18) ◽  
Author(s):  
S. Kong ◽  
D. Y. Liu ◽  
S. T. Cui ◽  
S. L. Ju ◽  
A. F. Wang ◽  
...  
1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.


2015 ◽  
Vol 5 (2) ◽  
Author(s):  
Cun Ye ◽  
Wei Ruan ◽  
Peng Cai ◽  
Xintong Li ◽  
Aifeng Wang ◽  
...  

1999 ◽  
Vol 06 (06) ◽  
pp. 1151-1157 ◽  
Author(s):  
L. DUDA ◽  
L. S. O. JOHANSSON ◽  
B. REIHL ◽  
H. W. YEOM ◽  
S. HARA ◽  
...  

We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the [Formula: see text] direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting a pz character, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the 2×1 and c(4×2) reconstructions.


2018 ◽  
Vol 97 (7) ◽  
Author(s):  
Alexander Yaresko ◽  
Andreas P. Schnyder ◽  
Hadj M. Benia ◽  
Chi-Ming Yim ◽  
Giorgio Levy ◽  
...  

2010 ◽  
Vol 82 (18) ◽  
Author(s):  
Da Wang ◽  
Jian Xu ◽  
Yuan-Yuan Xiang ◽  
Qiang-Hua Wang

2009 ◽  
Vol 80 (2) ◽  
Author(s):  
M. Yi ◽  
D. H. Lu ◽  
J. G. Analytis ◽  
J.-H. Chu ◽  
S.-K. Mo ◽  
...  

2009 ◽  
Vol 38 (8) ◽  
pp. 1717-1725 ◽  
Author(s):  
Michele Penna ◽  
Alberto Marnetto ◽  
Francesco Bertazzi ◽  
Enrico Bellotti ◽  
Michele Goano

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