scholarly journals Spin-orbit coupling and proximity effects in metallic carbon nanotubes

2015 ◽  
Vol 92 (11) ◽  
Author(s):  
Piotr Chudzinski
2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Bálint Fülöp ◽  
Albin Márffy ◽  
Simon Zihlmann ◽  
Martin Gmitra ◽  
Endre Tóvári ◽  
...  

AbstractVan der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin–orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe2 heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak antilocalization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene.


2013 ◽  
Vol 4 (1) ◽  
Author(s):  
G.A. Steele ◽  
F. Pei ◽  
E.A. Laird ◽  
J.M. Jol ◽  
H.B. Meerwaldt ◽  
...  

2018 ◽  
Vol 4 (9) ◽  
pp. eaat9349 ◽  
Author(s):  
Dmitrii Khokhriakov ◽  
Aron W. Cummings ◽  
Kenan Song ◽  
Marc Vila ◽  
Bogdan Karpiak ◽  
...  

Dirac materials such as graphene and topological insulators (TIs) are known to have unique electronic and spintronic properties. We combine graphene with TIs in van der Waals heterostructures to demonstrate the emergence of a strong proximity-induced spin-orbit coupling in graphene. By performing spin transport and precession measurements supported by ab initio simulations, we discover a strong tunability and suppression of the spin signal and spin lifetime due to the hybridization of graphene and TI electronic bands. The enhanced spin-orbit coupling strength is estimated to be nearly an order of magnitude higher than in pristine graphene. These findings in graphene-TI heterostructures could open interesting opportunities for exploring exotic physical phenomena and new device functionalities governed by topological proximity effects.


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