scholarly journals Thermodynamic stability of transition metals on the Mg-terminatedMgB2(0001) surface and their effects on hydrogen dissociation and diffusion

2015 ◽  
Vol 91 (15) ◽  
Author(s):  
Yongli Wang ◽  
Kyle Michel ◽  
Yongsheng Zhang ◽  
C. Wolverton
Keyword(s):  
Transition Metals ◽  
Thermodynamic Stability ◽  
Hydrogen Dissociation ◽  
And Diffusion

Effect of doping Hf on the hydrogen dissociation and diffusion mechanism on the ZrCo (110) surface

2019 ◽  
Vol 483 ◽  
pp. 383-390 ◽  
Author(s):  
Qingqing Wang ◽  
Xianggang Kong ◽  
Huilei Han ◽  
Ge Sang ◽  
Guanghui Zhang ◽  
...  
Keyword(s):  
Diffusion Mechanism ◽  
Hydrogen Dissociation ◽  
And Diffusion ◽  
Effect Of Doping

Measuring Diffusion Lengths in Epitaxial Silicon by Surface Photovoltage

1995 ◽  
Vol 386 ◽  
Author(s):  
John Lowell ◽  
Valerie Wenner ◽  
Damon Debusk
Keyword(s):  
Transition Metals ◽  
Optical Filters ◽  
Surface Photovoltage ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Optical Surface ◽  
Epitaxial Silicon ◽  
Type Silicon ◽  
P Type ◽  
And Diffusion

ABSTRACTIn CMOS, the use of epitaxial layers for prevention of latch-up in logic technologies is well-known and pervasive. One of the crucial parameters is the amount of metallic contamination due to transition metals such as Fe in the epi since this phenomena effects both device performance and quality. However, the ability to measure this parameter on product material is not generally available due to inherent problems with most known methods. The limitation of traditional surface photovoltage is that the deep optical penetration of over a hundred microns is well-beyond the depth of most epitaxial layers and does not accurately profile the epitaxial region [1]. In this paper we report on the application of optical surface photovoltage (SPV) using a set of ultra-shallow optical filters to both quantify and qualify as-grown epitaxial layers on CZ P-type silicon. We believe that a non-contact, SPV measurement of Fe concentration and diffusion lengths within an epitaxial region has not been previously reported.

Hydrogen dissociation and diffusion near the Si/a-SiO2 interface: Understanding degradation in MOSFETs

2018 ◽  
Vol 120 ◽  
pp. 561-568 ◽  
Author(s):  
S. Arash Sheikholeslam ◽  
Hegoi Manzano ◽  
Cristian Grecu ◽  
André Ivanov
Keyword(s):  
Hydrogen Dissociation ◽  
And Diffusion

Theoretical study of hydrogen dissociation and diffusion on Nb and Ni co-doped Mg(0001): A synergistic effect

2012 ◽  
Vol 606 (13-14) ◽  
pp. L45-L49 ◽  
Author(s):  
Ming Chen ◽  
Zhen-Zhun Cai ◽  
Xiao-Bao Yang ◽  
Min Zhu ◽  
Yu-Jun Zhao
Keyword(s):  
Synergistic Effect ◽  
Theoretical Study ◽  
Hydrogen Dissociation ◽  
And Diffusion ◽  
Co Doped
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