scholarly journals Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

2015 ◽  
Vol 91 (3) ◽  
Author(s):  
Stefan Schulz ◽  
Miguel A. Caro ◽  
Conor Coughlan ◽  
Eoin P. O'Reilly
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Electronic And Optical Properties ◽  
The Impact

scholarly journals Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
A. A. Roble ◽  
S. K. Patra ◽  
F. Massabuau ◽  
M. Frentrup ◽  
M. A. Leontiadou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Wells ◽  
Three Dimensional ◽  
Growth Direction ◽  
Electronic And Optical Properties ◽  
Exciton Localization ◽  
Peak Energy ◽  
Coulomb Effects ◽  
The Impact

AbstractWe report on a combined theoretical and experimental study of the impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of $$c$$c-plane GaN/AlGaN multi-quantum well systems. The presence of carrier localization effects in this system was demonstrated by experimental observations, such as the “S-shape” temperature dependence of the photoluminescence (PL) peak energy, and non-exponential PL decay curves that varied across the PL spectra at 10 K. A three-dimensional modified continuum model, coupled with a self-consistent Hartree scheme, was employed to gain insight into the electronic and optical properties of the experimentally studied $$c$$c-plane GaN/AlGaN quantum wells. This model confirmed the existence of strong hole localization arising from the combined effects of the built-in polarization field along the growth direction and the alloy fluctuations at the quantum well/barrier interface. However, for electrons these localization effects are less pronounced in comparison to the holes. Furthermore, our calculations show that the attractive Coulomb interaction between electron and hole results in exciton localization. This behavior is in contrast to the picture of independently localized electrons and holes, often used to explain the radiative recombination process in $$c$$c-plane InGaN/GaN quantum well systems.

Nonlinear optical properties of triple δ-doped quantum wells: The impact of the applied external fields

Optik ◽  
2019 ◽  
Vol 180 ◽  
pp. 387-393 ◽  
Author(s):  
F. Ungan ◽  
M.E. Mora-Ramos ◽  
E. Kasapoglu ◽  
H. Sari ◽  
I. Sökmen
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Nonlinear Optical ◽  
Nonlinear Optical Properties ◽  
External Fields ◽  
The Impact

Electronic and optical properties of ZnO/(Mg,Zn)O quantum wells with and without a distinct quantum-confined Stark effect

2012 ◽  
Vol 111 (6) ◽  
pp. 063701 ◽  
Author(s):  
Marko Stölzel ◽  
Johannes Kupper ◽  
Matthias Brandt ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Stark Effect ◽  
Electronic And Optical Properties ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

scholarly journals The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Single Mode ◽  
Group Iv ◽  
Light Power ◽  
Fully Integrated ◽  
Electronic And Optical Properties ◽  
Novel Approach

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.

Electronic and optical properties of nonpolara-plane GaN quantum wells

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
S. Schulz ◽  
T. J. Badcock ◽  
M. A. Moram ◽  
P. Dawson ◽  
M. J. Kappers ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Electronic And Optical Properties

The impact of endohedral atoms on the electronic and optical properties of Au25(SR)18 and Au38(SR)24

2016 ◽  
Vol 18 (46) ◽  
pp. 31419-31423 ◽  
Author(s):  
A. Muñoz-Castro
Keyword(s):  
Optical Properties ◽  
Electronic And Optical Properties ◽  
The Impact

Analysis of the endohedral atom role allows to rationalize their versatility as nanomaterials.

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