scholarly journals First-principles study of high-field-related electronic behavior of group-III nitrides

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
Qimin Yan ◽  
Emmanouil Kioupakis ◽  
Debdeep Jena ◽  
Chris G. Van de Walle
Keyword(s):  
First Principles ◽  
High Field ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
First Principles Study ◽  
Electronic Behavior

Point defects in group III nitrides: A comparative first-principles study

2019 ◽  
Vol 125 (21) ◽  
pp. 215705 ◽  
Author(s):  
Yinlu Gao ◽  
Dan Sun ◽  
Xue Jiang ◽  
Jijun Zhao
Keyword(s):  
Point Defects ◽  
First Principles ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
First Principles Study

Adsorption of gas molecules on group III atoms adsorbed g-C3N4: A first-principles study

Vacuum ◽  
2020 ◽  
Vol 175 ◽  
pp. 109293 ◽  
Author(s):  
Kaifei Bai ◽  
Zhen Cui ◽  
Enling Li ◽  
Yingchun Ding ◽  
Jiangshan Zheng ◽  
...  
Keyword(s):  
First Principles ◽  
Group Iii ◽  
First Principles Study ◽  
Gas Molecules

Comparative first principles study of ZnO doped with group III elements

2016 ◽  
Vol 688 ◽  
pp. 368-375 ◽  
Author(s):  
Mohamed Khuili ◽  
Nejma Fazouan ◽  
Hassna Abou El Makarim ◽  
Ghizlane El Halani ◽  
El Houssine Atmani
Keyword(s):  
First Principles ◽  
Group Iii ◽  
First Principles Study

First-principles study of high-field piezoelectricity in tetragonalPbTiO3

2010 ◽  
Vol 81 (1) ◽  
Author(s):  
Anindya Roy ◽  
Massimiliano Stengel ◽  
David Vanderbilt
Keyword(s):  
First Principles ◽  
High Field ◽  
First Principles Study

HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES

2002 ◽  
Vol 12 (04) ◽  
pp. 1057-1081 ◽  
Author(s):  
S. M. KOMIRENKO ◽  
K. W. KIM ◽  
V. A. KOCHELAP ◽  
M. A. STROSCIO
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
High Field ◽  
Transport Model ◽  
Group Iii Nitrides ◽  
Electron Velocity ◽  
Electron Velocity Distribution ◽  
Group Iii ◽  
Field Electron ◽  
High Electric Fields

We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is developed. The electron distribution as a function of the electron momenta and coordinate is analyzed. We have determined the critical field for the runaway regime and investigated this regime in detail. The electron velocity distribution over the device is studied at different fields. We have applied the model to the group-III nitrides: InN, GaN and AlN. For these materials, the basic parameters and characteristics of the high-field electron transport are obtained. We have found that the transport in the nitrides is always dissipative. However, in the runaway regime, energies and velocities of electrons increase with distance which results in average velocities higher than the peak velocity in bulk-like samples. We demonstrated that the runaway electrons are characterized by the extreme distribution function with the population inversion. A three-terminal heterostructure where the runaway effect can be detected and measured is proposed. We also have considered briefly different nitride-based small-feature-size devices where this effect can have an impact on the device performance.

scholarly journals Electronic Structure of Rock Salt Alloys of Rare Earth and Group III Nitrides

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4997
Author(s):  
Maciej J. Winiarski
Keyword(s):  
First Principles ◽  
Electronic Structures ◽  
Group Iii Nitrides ◽  
Linear Increase ◽  
Lattice Parameters ◽  
Ionic Radii ◽  
Band Gap Engineering ◽  
Group Iii ◽  
Cubic Lattice ◽  
P Type

Lattice parameters and electronic properties of RE1−xAxN alloys, where RE = Sc, Y, Lu and A = Al, Ga, and In, have been derived from first principles. The materials are expected to exhibit a linear decrease in cubic lattice parameters and a tendency to a linear increase in band gaps as a function of composition. These effects are connected with a strong mismatch between ionic radii of the RE and group III elements, which leads to chemical pressure in the mixed RE and group III nitrides. The electronic structures of such systems are complex, i.e., some contributions of the d- and p-type states, coming from RE and A ions, respectively, are present in their valence band regions. The findings discussed in this work may encourage further experimental efforts of band gap engineering in RE-based nitrides via doping with group III elements.

Sign in / Sign up

Export Citation Format

Share Document