scholarly journals Ising quantum Hall ferromagnetism in Landau levels|N|≥1of bilayer graphene

2014 ◽  
Vol 90 (7) ◽  
Author(s):  
Wenchen Luo ◽  
R. Côté ◽  
Alexandre Bédard-Vallée
Keyword(s):  
Quantum Hall ◽  
Bilayer Graphene ◽  
Landau Levels

scholarly journals Explanation of ν = −½ fractional quantum Hall state in bilayer graphene

2016 ◽  
Vol 472 (2186) ◽  
pp. 20150330 ◽  
Author(s):  
J. Jacak ◽  
L. Jacak
Keyword(s):  
Experimental Data ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Bilayer Graphene ◽  
Fractional Quantum Hall Effect ◽  
Landau Levels ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall State ◽  
Good Agreement

The commensurability condition is applied to determine the hierarchy of fractional filling of Landau levels for fractional quantum Hall effect (FQHE) in monolayer and bilayer graphene. Good agreement with experimental data is achieved. The presence of even-denominator filling fractions in the hierarchy of the FQHE in bilayer graphene is explained, including the state at ν = − 1 2 .

Layer Polarizability and Easy-Axis Quantum Hall Ferromagnetism in Bilayer Graphene

Nano Letters ◽  
2017 ◽  
Vol 17 (6) ◽  
pp. 3416-3420 ◽  
Author(s):  
C. Pan ◽  
Y. Wu ◽  
B. Cheng ◽  
S. Che ◽  
T. Taniguchi ◽  
...  
Keyword(s):  
Easy Axis ◽  
Quantum Hall ◽  
Bilayer Graphene

scholarly journals Chemical potential and quantum Hall ferromagnetism in bilayer graphene

Science ◽  
2014 ◽  
Vol 345 (6192) ◽  
pp. 58-61 ◽  
Author(s):  
Kayoung Lee ◽  
Babak Fallahazad ◽  
Jiamin Xue ◽  
David C. Dillen ◽  
Kyounghwan Kim ◽  
...  
Keyword(s):  
Degrees Of Freedom ◽  
Chemical Potential ◽  
Hexagonal Boron Nitride ◽  
Quantum Hall ◽  
Bilayer Graphene ◽  
Zero Magnetic Field ◽  
High Magnetic Fields ◽  
Complex Interplay ◽  
Electron Hole ◽  
Quantum Hall State

Bilayer graphene has a distinctive electronic structure influenced by a complex interplay between various degrees of freedom. We probed its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a nonlinear carrier density dependence and bears signatures of electron-electron interactions. The data allowed a direct measurement of the electric field–induced bandgap at zero magnetic field, the orbital Landau level (LL) energies, and the broken-symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors ν = 0 and ν = ±2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.

scholarly journals Helical quantum Hall edge modes in bilayer graphene: a realization of quantum spin-ladders

2015 ◽  
Vol T165 ◽  
pp. 014019 ◽  
Author(s):  
Victoria Mazo ◽  
Efrat Shimshoni ◽  
Chia-Wei Huang ◽  
Sam T Carr ◽  
H A Fertig
Keyword(s):  
Quantum Hall ◽  
Bilayer Graphene ◽  
Quantum Spin

RESISTANCE SPIKES INDUCED BY GATE-CONTROLLED VALLEY-SPLITTING IN SILICON

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3603-3608
Author(s):  
K. TAKASHINA ◽  
A. FUJIWARA ◽  
Y. TAKAHASHI ◽  
Y. HIRAYAMA
Keyword(s):  
Landau Level ◽  
Quantum Hall ◽  
Landau Levels ◽  
Marked Contrast ◽  
Valley Splitting

Landau-level coincidences are examined in a (100) silicon 2DEG by tuning the valley-splitting with front- and back-gates. A coincidence under quantum Hall conditions between levels of opposite spin, opposite valley, but like orbital indices at ν=6 is found to show suppressed resistance, while in marked contrast, coincidences at ν=4i (where i is an integer) between adjacent orbital Landau levels exhibit resistance spikes.

Sign in / Sign up

Export Citation Format

Share Document