Thermal conductivity of Si nanowires: A first-principles analysis of the role of defects

2014 ◽  
Vol 89 (15) ◽  
Author(s):  
By. Kang ◽  
S. K. Estreicher
2017 ◽  
Vol 111 (3) ◽  
pp. 032107 ◽  
Author(s):  
Martí Raya-Moreno ◽  
Hugo Aramberri ◽  
Juan Antonio Seijas-Bellido ◽  
Xavier Cartoixà ◽  
Riccardo Rurali

2017 ◽  
Vol 95 (4) ◽  
Author(s):  
Simen N. H. Eliassen ◽  
Ankita Katre ◽  
Georg K. H. Madsen ◽  
Clas Persson ◽  
Ole Martin Løvvik ◽  
...  

AIP Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 127236 ◽  
Author(s):  
Lei Wei ◽  
X. P. Wang ◽  
B. Liu ◽  
Y. Y. Zhang ◽  
X. S. Lv ◽  
...  

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.


2020 ◽  
Vol 22 (36) ◽  
pp. 20914-20921 ◽  
Author(s):  
Rajmohan Muthaiah ◽  
Jivtesh Garg

We report novel pathways to significantly enhance the thermal conductivity at nanometer length scales in boron phosphide through biaxial strain.


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