scholarly journals Long-distance coherent tunneling effect on the charge and heat currents in serially coupled triple quantum dots

2014 ◽  
Vol 89 (11) ◽  
Author(s):  
David M. T. Kuo ◽  
Yia-chung Chang
Keyword(s):  
Quantum Dots ◽  
Tunneling Effect ◽  
Long Distance ◽  
Triple Quantum Dots ◽  
Coherent Tunneling

Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping

2016 ◽  
Vol 120 (23) ◽  
pp. 234502 ◽  
Author(s):  
Takafumi Uchida ◽  
Mingyu Jo ◽  
Atsushi Tsurumaki-Fukuchi ◽  
Masashi Arita ◽  
Akira Fujiwara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gate Voltage ◽  
Triple Quantum Dots

scholarly journals Tunneling through triple quantum dots with mirror symmetry

2006 ◽  
Vol 73 (23) ◽  
Author(s):  
T. Kuzmenko ◽  
K. Kikoin ◽  
Y. Avishai
Keyword(s):  
Quantum Dots ◽  
Mirror Symmetry ◽  
Triple Quantum Dots

A spin switch device based on a triple quantum dots superlattice using the Dicke effect

2012 ◽  
Vol 21 (7) ◽  
pp. 077201 ◽  
Author(s):  
Xing-Tao An ◽  
Hui-Ying Mu ◽  
Li-Fen Xian ◽  
Jian-Jun Liu
Keyword(s):  
Quantum Dots ◽  
Triple Quantum Dots ◽  
Spin Switch

scholarly journals Quantum measurement of coherent tunneling between quantum dots

2001 ◽  
Vol 63 (23) ◽  
Author(s):  
H. M. Wiseman ◽  
Dian Wahyu Utami ◽  
He Bi Sun ◽  
G. J. Milburn ◽  
B. E. Kane ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Measurement ◽  
Coherent Tunneling

Fano–Kondo Effect in a Triple Quantum Dots Coupled to Ferromagnetic Leads

2008 ◽  
Vol 25 (8) ◽  
pp. 3028-3031 ◽  
Author(s):  
Bi Ai-Hua ◽  
Wu Shao-Quan ◽  
Hou Tao ◽  
Sun Wei-Li
Keyword(s):  
Quantum Dots ◽  
Kondo Effect ◽  
Triple Quantum Dots

PHOTOLUMINESCENCE OF ULTRA SMALL InAs/GaAs QUANTUM DOTS

2005 ◽  
Vol 19 (18) ◽  
pp. 907-917 ◽  
Author(s):  
Y. G. LIN ◽  
C. H. WU ◽  
S. L. TYAN ◽  
S. D. LIN ◽  
C. P. LEE
Keyword(s):  
Quantum Dots ◽  
Phonon Scattering ◽  
Transition Energy ◽  
Tunneling Effect ◽  
Energy Separation ◽  
Hole State ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
Shape Dependence ◽  
Electron And Hole States

The InAs/GaAs quantum dots (QDs) with a baselength of less than 10 nm are studied by the excitation-, temperature-dependent and magneto-photoluminescence (PL). The baselengths of the QDs, calculated by the PL ground state transition energy and estimated by magneto-PL spectra, are in agreement with the result of atomic force microscopy measurements. By means of the excitation-dependent PL, we demonstrate that only the ground electron and hole states exist when the baselength of the QDs is smaller than about 7.3 nm, whereas the larger dots with a baselength of about 8.7 nm will give rise to one excited hole state. The measured energy separation between the ground and the excited hole states is in good agreement with the theoretical calculation. The transition energy in temperature-dependent PL spectra shows a rapid redshift as the temperature is higher than the critical temperature. The redshift rate is about 2.8 and 2.5 times larger than the values calculated by Varshni's law for small and large dots respectively. The higher redshift rate can be explained by the stronger tunneling effect. In addition, the PL linewidths show a V-shape dependence with the temperature. This behavior could be well described as a tunneling and electron-phonon scattering effect.

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