scholarly journals Inelastic light-scattering from spin-density excitations in the regime of the persistent spin helix in a GaAs-AlGaAs quantum well

2014 ◽  
Vol 89 (8) ◽  
Author(s):  
C. Schönhuber ◽  
M. P. Walser ◽  
G. Salis ◽  
C. Reichl ◽  
W. Wegscheider ◽  
...  
Keyword(s):  
Light Scattering ◽  
Quantum Well ◽  
Spin Density ◽  
Inelastic Light Scattering

Inelastic light scattering by spin-density, charge-density, and single-particle excitations in GaAs quantum wires

1994 ◽  
Vol 49 (20) ◽  
pp. 14778-14781 ◽  
Author(s):  
A. Schmeller ◽  
A. R. Goñi ◽  
A. Pinczuk ◽  
J. S. Weiner ◽  
J. M. Calleja ◽  
...  
Keyword(s):  
Light Scattering ◽  
Charge Density ◽  
Spin Density ◽  
Single Particle ◽  
Quantum Wires ◽  
Inelastic Light Scattering

Inelastic-light-scattering study of magnetoplasma modes in a wide parabolic quantum well

1994 ◽  
Vol 49 (23) ◽  
pp. 16825-16828 ◽  
Author(s):  
L. B. Liao ◽  
D. Heiman ◽  
P. F. Hopkins ◽  
A. C. Gossard
Keyword(s):  
Light Scattering ◽  
Quantum Well ◽  
Inelastic Light Scattering ◽  
Scattering Study

Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells

2006 ◽  
Vol 518 ◽  
pp. 17-22 ◽  
Author(s):  
S. Lazić ◽  
J.M. Calleja ◽  
R. Hey ◽  
K. Ploog
Keyword(s):  
Light Scattering ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Vibration Modes ◽  
Inelastic Light Scattering ◽  
Resonance Energies ◽  
Resonant Raman ◽  
Resonant Raman Scattering

InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced by the presence of N. Their resonance energies reveal the influence of the N concentration on the barrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of local vibrations involving the pairing of N atoms, which seems to occur mostly at the quantum well interfaces due to preferential bonding of N to Al.

Inelastic light scattering by electrons in GaAs quantum wires: Spin-density, charge-density and single-particle excitations

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1281-1284 ◽  
Author(s):  
A. Schmeller ◽  
A.R. Goñi ◽  
A. Pinczuk ◽  
J.S. Weiner ◽  
J.M. Calleja ◽  
...  
Keyword(s):  
Light Scattering ◽  
Charge Density ◽  
Spin Density ◽  
Single Particle ◽  
Quantum Wires ◽  
Inelastic Light Scattering

An unified approach to inelastic light scattering in Keldysh–Schwinger functional integral formalism

2015 ◽  
Vol 29 (07) ◽  
pp. 1550040 ◽  
Author(s):  
Hyun Cheol Lee
Keyword(s):  
Light Scattering ◽  
Cross Sections ◽  
Golden Rule ◽  
Functional Integral ◽  
Integral Formalism ◽  
Inelastic Light Scattering ◽  
Scattering Geometry ◽  
The One ◽  
Resonant Part ◽  
Functional Integral Formalism

We propose a theoretical framework which can treat the nonresonant and the resonant inelastic light scattering on an equal footing in the form of correlation function, employing Keldysh–Schwinger functional integral formalism. The interference between the nonresonant and the resonant process can be also incorporated in this framework. This approach is applied to the magnetic Raman scattering of two-dimensional antiferromagnetic insulators. The entire set of the scattering cross-sections are obtained at finite temperature, the result for the resonant part agrees with the one obtained by the conventional Fermi golden rule at zero temperature. The interference contribution is shown to be very sensitive to the scattering geometry and the band structure.

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