scholarly journals Large spin splitting in the conduction band of transition metal dichalcogenide monolayers

2013 ◽  
Vol 88 (24) ◽  
Author(s):  
K. Kośmider ◽  
J. W. González ◽  
J. Fernández-Rossier
Nanoscale ◽  
2016 ◽  
Vol 8 (41) ◽  
pp. 17854-17860 ◽  
Author(s):  
Cai Cheng ◽  
Jia-Tao Sun ◽  
Xiang-Rong Chen ◽  
Hui-Xia Fu ◽  
Sheng Meng

2018 ◽  
Vol 97 (23) ◽  
Author(s):  
Tao Hu ◽  
Fanhao Jia ◽  
Guodong Zhao ◽  
Jiongyao Wu ◽  
Alessandro Stroppa ◽  
...  

2018 ◽  
Vol 83 ◽  
pp. 223-229 ◽  
Author(s):  
Kuan-Ting Chen ◽  
Ren-Yu He ◽  
Chia-Feng Lee ◽  
Ming-Ting Wu ◽  
Shu-Tong Chang

Author(s):  
Xiao Li ◽  
Hua Chen ◽  
Qian Niu

Absence of spatial inversion symmetry allows a nonequilibrium spin polarization to be induced by electric currents, which, in two-dimensional systems, is conventionally analyzed using the Rashba model, leading to in-plane spin polarization. Given that the material realizations of out-of-plane current-induced spin polarization (CISP) are relatively fewer than that of in-plane CISP, but important for perpendicular-magnetization switching and electronic structure evolution, it is highly desirable to search for new prototypical materials and mechanisms to generate the out-of-plane carrier spin and promote the study of CISP. Here, we propose that an out-of-plane CISP can emerge in ferromagnetic transition-metal dichalcogenide monolayers. Taking monolayer VSe2 and VTe2 as examples, we calculate the out-of-plane CISP based on linear-response theory and first-principles methods. We deduce a general low-energy model for easy-plane ferromagnetic transition-metal dichalcogenide monolayers and find that the out-of-plane CISP is due to an in-plane magnetization together with intrinsic spin–orbit coupling inducing an anisotropic out-of-plane spin splitting in the momentum space. The CISP paves the way for magnetization rotation and electric control of the valley quantum number.


RSC Advances ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 6388-6394
Author(s):  
Jiajia Chen ◽  
Kai Wu ◽  
Huanhuan Ma ◽  
Wei Hu ◽  
Jinlong Yang

Two-dimensional Janus transition-metal dichalcogenides possess an intrinsic Rashba effect, which can be manipulated by charge doping. Electron doping can effectively strengthen the Rashba effect, while hole doping would weaken it.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.


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