scholarly journals Valence band offsets at zinc-blende heterointerfaces with misfit dislocations: A first-principles study

2013 ◽  
Vol 88 (7) ◽  
Author(s):  
Yoyo Hinuma ◽  
Fumiyasu Oba ◽  
Isao Tanaka
1997 ◽  
Vol 482 ◽  
Author(s):  
J. A. Majewski ◽  
M. Städele

AbstractWe present a first-principles study of heteroepitaxial interfaces between GaN and both cubic as well as wurtzite AlN substrates oriented along main cubic or hexagonal directions and of stacking fault interfaces between cubic and wurtzite GaN. Our calculations show that all studied heterostructures are of type I. Valence band offsets for GaN/AlN are nearly independent of the substrate orientation and of the order of 0.8 eV. The valence and conduction band offsets for a stacking fault interface are predicted to be 40 meV and 175 meV, respectively.


Author(s):  
Jiangming Cao ◽  
Menglin Huang ◽  
Dingrong Liu ◽  
Zenghua Cai ◽  
Yu-Ning Wu ◽  
...  

2008 ◽  
Vol 103 (1) ◽  
pp. 013506 ◽  
Author(s):  
S. Saib ◽  
N. Bouarissa ◽  
P. Rodríguez-Hernández ◽  
A. Muñoz

2016 ◽  
Vol 380 (34) ◽  
pp. 2678-2684 ◽  
Author(s):  
Yong Zhang ◽  
Zhong-Xiang Xie ◽  
Xia Yu ◽  
Hai-Bin Wang ◽  
Yuan-Xiang Deng ◽  
...  

Nanomaterials ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 281 ◽  
Author(s):  
Suqin Xue ◽  
Fuchun Zhang ◽  
Shuili Zhang ◽  
Xiaoyang Wang ◽  
Tingting Shao

2011 ◽  
Vol 81 (4) ◽  
pp. 381-386 ◽  
Author(s):  
U. P. Verma ◽  
N. Devi ◽  
S. Sharma ◽  
P. Jensen

2011 ◽  
Vol 55 (4) ◽  
pp. 693-701 ◽  
Author(s):  
Yue Shen ◽  
Peng-Fei Lu ◽  
Zhong-Yuan Yu ◽  
Long Zhao ◽  
Han Ye ◽  
...  

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