scholarly journals Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Alejandro Molina-Sánchez ◽  
Davide Sangalli ◽  
Kerstin Hummer ◽  
Andrea Marini ◽  
Ludger Wirtz
Keyword(s):  
Double Layer ◽  
Single Layer ◽  
Optical Spectra ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Bulk Mos2

scholarly journals Controlling spin–orbit interaction in a ferromagnetic Fe/Au double layer

2015 ◽  
Vol 106 (4) ◽  
pp. 042404 ◽  
Author(s):  
Sergey N. Samarin ◽  
Oleg M. Artamonov ◽  
Alexander P. Baraban ◽  
Mikhail Kostylev ◽  
Paul Guagliardo ◽  
...  
Keyword(s):  
Double Layer ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

Tunable Spin–Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors

Nano Letters ◽  
2012 ◽  
Vol 12 (5) ◽  
pp. 2212-2216 ◽  
Author(s):  
Zhuoyu Chen ◽  
Hongtao Yuan ◽  
Yanfeng Zhang ◽  
Kentaro Nomura ◽  
Teng Gao ◽  
...  
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Trilayer Graphene

Dual-band and ultra-broadband photonic spin-orbit interaction for electromagnetic shaping based on single-layer silicon metasurfaces

2019 ◽  
Vol 7 (5) ◽  
pp. 586 ◽  
Author(s):  
Xin Xie ◽  
Mingbo Pu ◽  
Xiong Li ◽  
Kaipeng Liu ◽  
Jinjin Jin ◽  
...  
Keyword(s):  
Single Layer ◽  
Orbit Interaction ◽  
Dual Band ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Electromagnetic Shaping

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry
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