From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation

2013 ◽  
Vol 88 (3) ◽  
Author(s):  
Hannu-Pekka Komsa ◽  
Simon Kurasch ◽  
Ossi Lehtinen ◽  
Ute Kaiser ◽  
Arkady V. Krasheninnikov
Keyword(s):  
Electron Irradiation ◽  
Atomic Structure ◽  
Extended Defects ◽  
Two Dimensional

Electronic, optical and thermoelectric properties of novel two-dimensional SbXY (X=Se, Te; Y=Br, I) family: ab initio perspective

2021 ◽  
Author(s):  
Asadollah Bafekry ◽  
M. Faraji ◽  
Mohamed Fadlallah ◽  
Hoat Do Minh ◽  
Hamad R. Jappor ◽  
...  
Keyword(s):  
Ab Initio ◽  
Thermoelectric Properties ◽  
Atomic Structure ◽  
Two Dimensional ◽  
Recent Developments

Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X= Br, Cl) structures [Debarati Hajra et al., ACS Nano 14, 15626 (2020)] have led to exploring the atomic structure,...

Atomic Structure and Work Function Modulations in Two-Dimensional Ultrathin CuI Films on Cu(111) from First-Principles Calculations

2020 ◽  
Vol 124 (30) ◽  
pp. 16362-16370
Author(s):  
Giyeok Lee ◽  
Yun-Jae Lee ◽  
Krisztián Palotás ◽  
Taehun Lee ◽  
Aloysius Soon
Keyword(s):  
Work Function ◽  
Atomic Structure ◽  
First Principles ◽  
Two Dimensional ◽  
First Principles Calculations

Ultrathin Silica Films: The Atomic Structure of Two-Dimensional Crystals and Glasses

2014 ◽  
Vol 20 (30) ◽  
pp. 9176-9183 ◽  
Author(s):  
Christin Büchner ◽  
Leonid Lichtenstein ◽  
Xin Yu ◽  
J. Anibal Boscoboinik ◽  
Bing Yang ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Two Dimensional ◽  
Silica Films

Atomic structure of extended defects in boron-implanted silicon layers

2014 ◽  
Vol 50 (3) ◽  
pp. 241-246
Author(s):  
L. I. Fedina ◽  
A. K. Gutakovskii ◽  
A. V. Latyshev
Keyword(s):  
Atomic Structure ◽  
Extended Defects

scholarly journals Progress in 3C-SiC Growth and Novel Applications

2012 ◽  
Vol 711 ◽  
pp. 3-10 ◽  
Author(s):  
Rositza Yakimova ◽  
Remigijus Vasiliauskas ◽  
Jens Eriksson ◽  
Mikael Syväjärvi
Keyword(s):  
Low Temperature ◽  
Electrical Activity ◽  
Substrate Surface ◽  
Growth Conditions ◽  
Extended Defects ◽  
Two Dimensional ◽  
Novel Applications ◽  
Sublimation Growth

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined.

scholarly journals Atomic Structure of Intrinsic and Electron-Irradiation-Induced Defects in MoTe2

2018 ◽  
Vol 30 (4) ◽  
pp. 1230-1238 ◽  
Author(s):  
Kenan Elibol ◽  
Toma Susi ◽  
Giacomo Argentero ◽  
Mohammad Reza Ahmadpour Monazam ◽  
Timothy J. Pennycook ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Atomic Structure ◽  
Induced Defects ◽  
Irradiation Induced Defects
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