Oscillatory relaxation of surface photovoltage on a silicon surface

2013 ◽  
Vol 87 (23) ◽  
Author(s):  
M. Ogawa ◽  
S. Yamamoto ◽  
R. Yukawa ◽  
R. Hobara ◽  
C.-H. Lin ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Surface Photovoltage ◽  
Oscillatory Relaxation

Erratum: Oscillatory relaxation of surface photovoltage on a silicon surface [Phys. Rev. B87, 235308 (2013)]

2014 ◽  
Vol 89 (11) ◽  
Author(s):  
M. Ogawa ◽  
S. Yamamoto ◽  
R. Yukawa ◽  
R. Hobara ◽  
C.-H. Lin ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Surface Photovoltage ◽  
Oscillatory Relaxation

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

Profile Imaging of Silicon Surface Reconstructions

1985 ◽  
Vol 43 ◽  
pp. 262-263
Author(s):  
O.L. Krivanek ◽  
G.J. Wood
Keyword(s):  
Electron Microscopy ◽  
Surface Structure ◽  
Structure Determination ◽  
Silicon Surface ◽  
Good Resolution ◽  
Surface Reconstructions ◽  
Bulk Structure ◽  
Point To Point ◽  
The Relationship

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

Frustration and (111) silicon surface

1983 ◽  
Vol 44 (2) ◽  
pp. 257-261 ◽  
Author(s):  
B.K. Chakraverty
Keyword(s):  
Silicon Surface

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Angular Ellipsometry of Porous Silicon Surface Layers

2020 ◽  
Vol 12 (3) ◽  
pp. 03024-1-03024-4
Author(s):  
L. V. Poperenko ◽  
◽  
S. G. Rozouvan ◽  
I. V. Yurgelevych ◽  
P. O. Lishchuk ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Surface Layers ◽  
Porous Silicon Surface
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