Effective spin diffusion in spin-polarized equilibrium and quasiequilibrium Fermi liquids

2013 ◽  
Vol 87 (17) ◽  
Author(s):  
Hari P. Dahal ◽  
Kevin S. Bedell
Keyword(s):  
Spin Diffusion ◽  
Fermi Liquids ◽  
Effective Spin ◽  
Spin Polarized

Transverse spin dynamics in spin-polarized Fermi liquids

1992 ◽  
Vol 89 (3-4) ◽  
pp. 531-534
Author(s):  
A. E. Meyerovich ◽  
K. A. Musaelian
Keyword(s):  
Spin Dynamics ◽  
Transverse Spin ◽  
Fermi Liquids ◽  
Spin Polarized

Transverse spin diffusion and spin rotation in very dilute, spin-polarized−43He mixtures

1991 ◽  
Vol 44 (14) ◽  
pp. 7510-7518 ◽  
Author(s):  
D. Candela ◽  
D. R. McAllaster ◽  
L-J. Wei
Keyword(s):  
Spin Diffusion ◽  
Spin Rotation ◽  
Transverse Spin ◽  
Spin Polarized

Zero-temperature relaxation in spin-polarized fermi liquids

1997 ◽  
Vol 106 (5-6) ◽  
pp. 653-671 ◽  
Author(s):  
A. E. Meyerovich ◽  
A. Stepaniants
Keyword(s):  
Fermi Liquids ◽  
Zero Temperature ◽  
Spin Polarized ◽  
Temperature Relaxation

A DISCUSSION ON SPIN-POLARIZED QUASIPARTICLES INJECTION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 487-489
Author(s):  
C. H. CAO ◽  
M. YANG ◽  
S. Z. YANG
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Ybco Film ◽  
Current Injection ◽  
Injection Efficiency ◽  
Spin Polarized ◽  
Spin Diffusion Length

The spin-polarized quasiparticles injection in YBCO film has been studied by means of current injection into NdSrMnO / SrTiO / YBaCuO heterostructures. Six injection junction windows are all 56μm wide, but 80μm, 40μm, 20μm, 10μm, 5μm, and 2μm long, respectively. Under I inj=0.5 Ma , injection efficiency η increases gradually with the decrease of injection junction length L, but η hardly varies when L is less than 20ηm. ηmax is more than 6. These experiment results are related with the spin diffusion length of spin-polarized quasiparticles in a-b plane of YBCO film. "Current-adding principle" would be used carefully to explain the experiment phenomena.

Measurement of the Longitudinal Spin Diffusion Coefficient in Spin Polarized Atomic Hydrogen

1987 ◽  
Vol 26 (S3-1) ◽  
pp. 233 ◽  
Author(s):  
N. P. Bigelow ◽  
J. S. Denker ◽  
B. W. Statt ◽  
D. M. Lee ◽  
J. H. Freed
Keyword(s):  
Diffusion Coefficient ◽  
Atomic Hydrogen ◽  
Spin Diffusion ◽  
Longitudinal Spin ◽  
Spin Polarized

Multiple spin echoes in spin polarized Fermi liquids

1991 ◽  
Vol 85 (5-6) ◽  
pp. 389-422 ◽  
Author(s):  
A. S. Bedford ◽  
R. M. Bowley ◽  
J. R. Owers-Bradley ◽  
D. Wightman
Keyword(s):  
Fermi Liquids ◽  
Spin Polarized ◽  
Spin Echoes

scholarly journals Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

2021 ◽  
Vol 8 ◽  
Author(s):  
Nilay Maji ◽  
Subhasis Shit ◽  
T. K. Nath
Keyword(s):  
Room Temperature ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Injection ◽  
Spin Accumulation ◽  
Injection Model ◽  
Tunnel Contact ◽  
Current Voltage ◽  
Spin Polarized ◽  
Junction Structure

In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been performed experimentally. The electronic and magneto-transport characteristics have been explored in the temperature range of 100–300 K. The current-voltage (I-V) characteristics of the heterojunction have been recorded, which displayed an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The application of an external magnetic field parallel to the plane of the NZFO film causes the current (I) across the junction to decrease, clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The root of displaying positive magnetoresistance in our heterojunction has been well justified using the standard spin injection model. The electrical injection of spin-polarized carriers and its accumulation and detection in a p-Si channel have been demonstrated using the NZFO/MgO tunnel contact using a three-terminal (3-T) Hanle device. The parameters such as spin lifetime (99 ps), spin diffusion length (276 nm), and spin polarization (0.44) have been estimated from the Hanle curve detected in our heterostructure at room temperature, making the Ni0.65Zn0.35Fe2O4/MgO/p-Si device a very favorable promising junction structure in the field of spintronics for several device appliances in the future.

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