scholarly journals Theoretical assessment on the possibility of constraining point-defect energetics by pseudo phase transition pressures

2013 ◽  
Vol 87 (17) ◽  
Author(s):  
Hua Y. Geng ◽  
Hong X. Song ◽  
Q. Wu
Keyword(s):  
Phase Transition ◽  
Point Defect ◽  
Theoretical Assessment

scholarly journals Isostructural phase transition by point defect reorganization in the binary type-I clathrate Ba7.5Si45

2021 ◽  
pp. 116824
Author(s):  
Régis Debord ◽  
Holger Euchner ◽  
Vittoria Pischedda ◽  
Michael Hanfland ◽  
Alfonso SanMiguel ◽  
...  
Keyword(s):  
Phase Transition ◽  
Point Defect ◽  
Type I ◽  
Isostructural Phase Transition

scholarly journals Isostructural Phase Transition by Point Defect Reorganization in the Binary Type-I Clathrate Ba 7.5Si 45

2021 ◽  
Author(s):  
Régis Debord ◽  
Holger Euchner ◽  
Vittoria Pischedda ◽  
Michael Hanfland ◽  
Alfonso San-Miguel ◽  
...  
Keyword(s):  
Phase Transition ◽  
Point Defect ◽  
Type I ◽  
Isostructural Phase Transition

Defect formation in chemically reduced congruent LiTaO3: ab initio simulations and inelastic neutron scattering

2021 ◽  
Vol 9 (38) ◽  
pp. 13484-13499
Author(s):  
Thomas Köhler ◽  
Matthias Zschornak ◽  
Mohamed Zbiri ◽  
Juliane Hanzig ◽  
Christian Röder ◽  
...  
Keyword(s):  
Phase Transition ◽  
Point Defect ◽  
Defect Formation ◽  
Inelastic Neutron Scattering ◽  
Structural Phase ◽  
Inelastic Neutron ◽  
Ferroelectric Domain ◽  
Ab Initio Simulations ◽  
Phonon Spectra ◽  
Ferroelectric Domain Structure

Phonon spectra are measured to identify the point defect formation in LiTaO3 and separate it from further contributions of the structural phase transition as well as the ferroelectric domain structure.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

The structure of membranes and membrane proteins embedded in amorphous ice

1992 ◽  
Vol 50 (1) ◽  
pp. 432-433
Author(s):  
Uwe Lücken ◽  
Joachim Jäger
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Membrane Proteins ◽  
Phase Transition Temperature ◽  
Lipid Vesicles ◽  
Freezing Stress ◽  
Amorphous Ice ◽  
Different Temperatures ◽  
Band Pass ◽  
Lipid Polymorphism

TEM imaging of frozen-hydrated lipid vesicles has been done by several groups Thermotrophic and lyotrophic polymorphism has been reported. By using image processing, computer simulation and tilt experiments, we tried to learn about the influence of freezing-stress and defocus artifacts on the lipid polymorphism and fine structure of the bilayer profile. We show integrated membrane proteins do modulate the bilayer structure and the morphology of the vesicles.Phase transitions of DMPC vesicles were visualized after freezing under equilibrium conditions at different temperatures in a controlled-environment vitrification system. Below the main phase transition temperature of 24°C (Fig. 1), vesicles show a facetted appearance due to the quasicrystalline areas. A gradual increase in temperature leads to melting processes with different morphology in the bilayer profile. Far above the phase transition temperature the bilayer profile is still present. In the band-pass-filtered images (Fig. 2) no significant change in the width of the bilayer profile is visible.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Point Defect Absorption and Dislocation Loop Formation at Grain Boundaries in Hvem-Irradiated Zr and Its Alloys:1. Influence of Solute Addition

1985 ◽  
Vol 43 ◽  
pp. 350-351
Author(s):  
R.A. Herring ◽  
M. Griffiths ◽  
M.H Loretto ◽  
R.E. Smallman
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Point Defect ◽  
Reactor Core ◽  
Solute Concentration ◽  
Nuclear Industry ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Component Material ◽  
Impurity Interaction

Because Zr is used in the nuclear industry to sheath fuel and as structural component material within the reactor core, it is important to understand Zr's point defect properties. In the present work point defect-impurity interaction has been assessed by measuring the influence of grain boundaries on the width of the zone denuded of dislocation loops in a series of irradiated Zr alloys. Electropolished Zr and its alloys have been irradiated using an AEI EM7 HVEM at 1 MeV, ∼675 K and ∼10-6 torr vacuum pressure. During some HVEM irradiations it has been seen that there is a difference in the loop nucleation and growth behaviour adjacent to the grain boundary as compared with the mid-grain region. The width of the region influenced by the presence of the grain boundary should be a function of the irradiation temperature, dose rate, solute concentration and crystallographic orientation.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

Dynamic low-dose electron diffraction and imaging of phase transitions in polymers

1993 ◽  
Vol 51 ◽  
pp. 890-891
Author(s):  
David C. Martin ◽  
Jun Liao
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Electron Diffraction ◽  
Low Dose ◽  
Dark Field ◽  
Continuous Change ◽  
Selected Area Electron Diffraction ◽  
Resolution Electron ◽  
Chain Axis ◽  
High Resolution Electron Micrographs

By careful control of the electron beam it is possible to simultaneously induce and observe the phase transformation from monomer to polymer in certain solid-state polymcrizable diacetylenes. The continuous change in the crystal structure from DCHD diacetylene monomer (a=1.76 nm, b=1.36 nm, c=0.455 nm, γ=94 degrees, P2l/c) to polymer (a=1.74 nm, b=1.29 nm, c=0.49 nm, γ=108 degrees, P2l/c) occurs at a characteristic dose (10−4C/cm2) which is five orders of magnitude smaller than the critical end point dose (20 C/cm2). Previously we discussed the progress of this phase transition primarily as observed down the [001] zone (the chain axis direction). Here we report on the associated changes of the dark field (DF) images and selected area electron diffraction (SAED) patterns of the crystals as observed from the side (i.e., in the [hk0] zones).High resolution electron micrographs (HREM), DF images, and SAED patterns were obtained on a JEOL 4000 EX HREM operating at 400 kV.

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