scholarly journals High-precision Fourier Monte Carlo simulation of crystalline membranes

2013 ◽  
Vol 87 (10) ◽  
Author(s):  
A. Tröster
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Precision

scholarly journals Determination of electron backscattering coefficient of beryllium by a high-precision Monte Carlo simulation

2021 ◽  
Vol 26 ◽  
pp. 100862
Author(s):  
Abrar Hussain ◽  
Lihao Yang ◽  
Shifeng Mao ◽  
Bo Da ◽  
Károly Tőkési ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Precision ◽  
Backscattering Coefficient ◽  
Electron Backscattering

scholarly journals High Precision Positioning with Multi-Camera Setups: Adaptive Kalman Fusion Algorithm for Fiducial Markers

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2746 ◽  
Author(s):  
Dragos Constantin Popescu ◽  
Ioan Dumitrache ◽  
Simona Iuliana Caramihai ◽  
Mihail Octavian Cernaianu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Precision ◽  
Measurement Noise ◽  
Fusion Method ◽  
Fiducial Markers ◽  
Multiple Cameras ◽  
Precision Positioning ◽  
Fusion Algorithm ◽  
Physics Experiments

The paper addresses the problem of fusing the measurements from multiple cameras in order to estimate the position of fiducial markers. The objectives are to increase the precision and to extend the working area of the system. The proposed fusion method employs an adaptive Kalman algorithm which is used for calibrating the setup of cameras as well as for estimating the pose of the marker. Special measures are taken in order to mitigate the effect of the measurement noise. The proposed method is further tested in different scenarios using a Monte Carlo simulation, whose qualitative precision results are determined and compared. The solution is designed for specific positioning and alignment tasks in physics experiments, but also, has a degree of generality that makes it suitable for a wider range of applications.

scholarly journals ANALYSIS OF RANDOM NUMBER GENERATORS USING MONTE CARLO SIMULATION

1994 ◽  
Vol 05 (03) ◽  
pp. 547-560 ◽  
Author(s):  
P.D. CODDINGTON
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Ising Model ◽  
High Precision ◽  
Random Number ◽  
Statistical Tests ◽  
Exact Results ◽  
Random Number Generators ◽  
Monte Carlo Algorithms

Monte Carlo simulation is one of the main applications involving the use of random number generators. It is also one of the best methods of testing the randomness properties of such generators, by comparing results of simulations using different generators with each other, or with analytic results. Here we compare the performance of some popular random number generators by high precision Monte Carlo simulation of the 2-d Ising model, for which exact results are known, using the Metropolis, Swendsen-Wang, and Wolff Monte Carlo algorithms. Many widely used generators that perform well in standard statistical tests are shown to fail these Monte Carlo tests.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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