Role of charge transfer, dipole-dipole interactions, and electrostatics in Fermi-level pinning at a molecular heterojunction on a metal surface

2013 ◽  
Vol 87 (3) ◽  
Author(s):  
P. Amsalem ◽  
J. Niederhausen ◽  
A. Wilke ◽  
G. Heimel ◽  
R. Schlesinger ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Metal Surface ◽  
Fermi Level Pinning ◽  
Dipole Interactions

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

scholarly journals Fermi level pinned molecular donor/acceptor junctions: reduction of induced carrier density by interfacial charge transfer complexes

2020 ◽  
Vol 8 (43) ◽  
pp. 15199-15207
Author(s):  
Paul Beyer ◽  
Eduard Meister ◽  
Timo Florian ◽  
Alexander Generalov ◽  
Wolfgang Brütting ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Carrier Density ◽  
Charge Transfer Complex ◽  
Charge Transfer Complexes ◽  
Interfacial Charge Transfer ◽  
Fermi Level Pinning ◽  
Donor Acceptor ◽  
Interfacial Charge

Charge transfer complex (CPX) formation at a donor–acceptor interface reduces the amount of Fermi-level pinning induced interfacial charge transfer.

scholarly journals Assessing the role of hydrogen in Fermi-level pinning in chalcopyrite and kesterite solar absorbers from first-principles calculations

2018 ◽  
Vol 123 (16) ◽  
pp. 161408 ◽  
Author(s):  
J. B. Varley ◽  
V. Lordi ◽  
T. Ogitsu ◽  
A. Deangelis ◽  
K. Horsley ◽  
...  
Keyword(s):  
Fermi Level ◽  
First Principles ◽  
First Principles Calculations ◽  
Fermi Level Pinning ◽  
Solar Absorbers

Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces

2014 ◽  
Vol 115 (4) ◽  
pp. 043529 ◽  
Author(s):  
Stanisław Krukowski ◽  
Paweł Kempisty ◽  
Paweł Strak ◽  
Konrad Sakowski
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Fermi Level Pinning
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