scholarly journals Quantum confinement of volume plasmons and interband transitions in germanium nanocrystals

2012 ◽  
Vol 86 (24) ◽  
Author(s):  
P. D. Nguyen ◽  
D. M. Kepaptsoglou ◽  
R. Erni ◽  
Q. M. Ramasse ◽  
A. Olsen
Keyword(s):  
Quantum Confinement ◽  
Interband Transitions ◽  
Germanium Nanocrystals

Strong quantum-confinement effects in the conduction band of germanium nanocrystals

2004 ◽  
Vol 84 (20) ◽  
pp. 4056-4058 ◽  
Author(s):  
C. Bostedt ◽  
T. van Buuren ◽  
T. M. Willey ◽  
N. Franco ◽  
L. J. Terminello ◽  
...  
Keyword(s):  
Conduction Band ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Germanium Nanocrystals

Quantum confinement in germanium nanocrystals

2000 ◽  
Vol 77 (8) ◽  
pp. 1182-1184 ◽  
Author(s):  
Y. M. Niquet ◽  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Quantum Confinement ◽  
Germanium Nanocrystals

Solution Synthesis of Germanium Nanocrystals Demonstrating Quantum Confinement

1998 ◽  
Vol 10 (1) ◽  
pp. 22-24 ◽  
Author(s):  
Boyd R. Taylor ◽  
Susan M. Kauzlarich ◽  
Howard W. H. Lee ◽  
Gildardo R. Delgado
Keyword(s):  
Quantum Confinement ◽  
Solution Synthesis ◽  
Germanium Nanocrystals

ChemInform Abstract: Solution Synthesis of Germanium Nanocrystals Demonstrating Quantum Confinement.

ChemInform ◽  
2010 ◽  
Vol 29 (15) ◽  
pp. no-no
Author(s):  
B. R. TAYLOR ◽  
S. M. KAUZLARICH ◽  
H. W. H. LEE ◽  
G. R. DELGADO
Keyword(s):  
Quantum Confinement ◽  
Solution Synthesis ◽  
Germanium Nanocrystals

Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals

2008 ◽  
Vol 205 (4) ◽  
pp. 888-891 ◽  
Author(s):  
M. I. Alonso ◽  
M. Garriga ◽  
A. Bernardi ◽  
A. R. Goñi ◽  
A. F. Lopeandia ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Interband Transitions ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Ge Nanocrystals

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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