scholarly journals Determining the planar Nernst effect from magnetic-field-dependent thermopower and resistance in nickel and permalloy thin films

2012 ◽  
Vol 86 (18) ◽  
Author(s):  
A. D. Avery ◽  
M. R. Pufall ◽  
B. L. Zink
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Nernst Effect ◽  
Field Dependent ◽  
Permalloy Thin Films

Temperature and magnetic field dependent Raman study of electron-phonon interactions in thin films of Bi2Se3 and Bi2Te3 nanoflakes

2020 ◽  
Vol 101 (24) ◽  
Author(s):  
Sören Buchenau ◽  
Sarah Scheitz ◽  
Astha Sethi ◽  
John E. Slimak ◽  
Tomke Eva Glier ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Dependent ◽  
Raman Study

Investigating the magnetic field-dependent conductivity in magnetite thin films by modelling the magnetorefractive effect

2013 ◽  
Vol 26 (3) ◽  
pp. 036002 ◽  
Author(s):  
Chris S Kelley ◽  
James Naughton ◽  
Emma Benson ◽  
Ruth C Bradley ◽  
Vlado K Lazarov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Dependent ◽  
The Magnetic Field ◽  
Magnetorefractive Effect

MICROWAVE DISSIPATION IN YBa2Cu3O7-δ THIN FILMS WITH IRRADIATION-INDUCED COLUMNAR DEFECTS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2822-2827 ◽  
Author(s):  
E. Silva ◽  
G. Ghigo ◽  
L. Gozzelino ◽  
C. Camerlingo ◽  
S. Sarti
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Heavy Ion ◽  
Columnar Defects ◽  
Field Dependent ◽  
The Magnetic Field

We present measurements of the magnetic field dependent microwave dissipation in a heavy-ion irradiated thin YBa 2 Cu 3 O 7-δ film, in order to study the effects of columnar defects on the pinning of vortices. Columnar defects were produced at 45° with respect to the c axis. Measurements of the microwave dissipation at 48 GHz were taken as a function of the angle between the field and the c axis, in order to compare the response along and perpendicular to the columns. The field was in the 0.3 T range. Several temperatures near the liquid nitrogen temperature were investigated. We find a dip in the dissipation when the field is aligned to the tracks. The dip is absent when the field is aligned perpendicular to the tracks, and with the same angle with respect to the crystallographic directions. The dip is not very sharp, and shows up for angles as far as 30° from the track directions. From the measurements, we estimate the pinning frequency along the columns at 80 K to be νpc ≃ 25 GHz .

Magnetic field-dependent ordinary Hall effect and thermopower of VO2 thin films

2016 ◽  
Vol 16 (3) ◽  
pp. 335-339 ◽  
Author(s):  
Jeongyong Choi ◽  
Bong-Jun Kim ◽  
Giwan Seo ◽  
Hyun-Tak Kim ◽  
Sunglae Cho ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Hall Effect ◽  
Field Dependent ◽  
Vo2 Thin Films

scholarly journals Nanomaterials Characterisation through Magnetic Field Dependent AFM

2021 ◽  
Author(s):  
Marco Coïsson ◽  
Gabriele Barrera ◽  
Federica Celegato ◽  
Paola Tiberto
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Atomic Force Microscopy ◽  
Magnetic Force ◽  
Magnetic Field Gradient ◽  
Hysteresis Loops ◽  
Force Microscopy ◽  
Atomic Force ◽  
Field Dependent ◽  
Versatile Technique

Atomic force microscopy is a versatile technique allowing to exploit many different physical effects for measuring a number of materials properties. The magnetic properties of surfaces and thin films are traditionally accessed through magnetic force microscopy, which produces magnetic field gradient maps generated by the magnetisation distribution at the surface of the sample. However, more advanced techniques can be derived from this fundamental setup, allowing for a richer characterisation of magnetic samples. In this chapter, we will describe how to extend a magnetic force microscope to allow magnetic field-dependent characterisations. Magnetisation reversal processes, as well as full hysteresis loops, can be investigated with such a technique, with field resolution adequate for identifying significant features such as domains reversal, nucleation or annihilation of domains, and other irreversible mechanisms. The same principle can also be exploited for the measurement of magnetostriction on thin films, and can be taken as guideline for other advanced applications of atomic force microscopy.

Picosecond control of coherent magnetisation dynamics in permalloy thin films by picosecond magnetic field pulse shaping

2002 ◽  
Vol 240 (1-3) ◽  
pp. 283-286 ◽  
Author(s):  
Th. Gerrits ◽  
H.A.M. van den Berg ◽  
J. Hohlfeld ◽  
O. Gielkens ◽  
L. Bär ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Pulse Shaping ◽  
Magnetic Field Pulse ◽  
Field Pulse ◽  
Permalloy Thin Films

Cobalt content- and magnetic field-dependent transmission behaviors of red laser light for Co Al 2 O 3 granular thin films

2017 ◽  
Vol 69 ◽  
pp. 303-311 ◽  
Author(s):  
Giap Van Cuong ◽  
Tran Trung ◽  
Nguyen Anh Tue ◽  
Nguyen Anh Tuan
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Laser Light ◽  
Cobalt Content ◽  
Field Dependent

scholarly journals Electrical resistance and magnetoresistance of highly oriented and polycrystalline La0.67Sr0.33MnO3/MgO(001) thin films

2015 ◽  
Vol 55 (2) ◽  
Author(s):  
Bonifacas Vengalis ◽  
Irina Černiukė ◽  
Andrius Maneikis ◽  
Antanas Kleopas Oginskis ◽  
Gražina Grigaliūnaitė-Vonsevičienė
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Grain Boundaries ◽  
Current Flow ◽  
Rf Magnetron Sputtering ◽  
Polycrystalline Structure ◽  
Spin Polarized ◽  
Field Dependent ◽  
Parallel Channels

La0.67Sr0.33MnO3 thin films exhibiting a highly (001)-plane oriented and polycrystalline structure with a variable amount of (011)-textured crystallites have been grown in situ by RF magnetron sputtering on crystalline MgO(001) substrates by changing deposition temperature from 550 to 800 °C. Competing contribution of grains and grain boundaries to resistivity and magnetoresistance of the films has been investigated at T = (78–330) K. A model based on two parallel channels of current flow across grain boundaries has been applied to explain coexistence of low (LFMR) and high field (HFMR) magnetoresistance effects in the polycrystalline films at low temperatures. The LFMR effect has been understood assuming tunnelling of spin-polarized carriers via magnetic field-driven tunnelling barriers formed naturally between neighbouring misoriented grains. Meanwhile, the HFMR phenomenon has been associated with magnetic field-dependent hopping of carriers via the intergrain regions with reduced carrier density. Importance of the phase separation phenomenon on possible inhomogeneity of the material at grain boundaries has been discussed.

Sign in / Sign up

Export Citation Format

Share Document