scholarly journals Finger-gate manipulated quantum transport in a semiconductor narrow constriction with spin-orbit interactions and Zeeman effect

2012 ◽  
Vol 86 (12) ◽  
Author(s):  
Chi-Shung Tang ◽  
Shu-Yu Chang ◽  
Shun-Jen Cheng
Keyword(s):  
Quantum Transport ◽  
Zeeman Effect ◽  
Spin Orbit ◽  
Spin Orbit Interactions

scholarly journals Symmetries of quantum transport with Rashba spin–orbit: graphene spintronics

2015 ◽  
Vol 17 (25) ◽  
pp. 16469-16475 ◽  
Author(s):  
Leonor Chico ◽  
Andrea Latgé ◽  
Luis Brey
Keyword(s):  
Magnetic Fields ◽  
Quantum Transport ◽  
Magnetic Impurities ◽  
Spin Orbit ◽  
Electrical Currents ◽  
Rashba Spin ◽  
Spin Polarized ◽  
Spin Orbit Interactions

The lack of some spatial symmetries in planar devices with Rashba spin–orbit interactions opens up the possibility of producing spin polarized electrical currents in the absence of external magnetic fields or magnetic impurities.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals First-Principles Quantum Transport Modeling of Spin-Transfer and Spin-Orbit Torques in Magnetic Multilayers

2018 ◽  
pp. 1-35 ◽  
Author(s):  
Branislav K. Nikolić ◽  
Kapildeb Dolui ◽  
Marko D. Petrović ◽  
Petr Plecháč ◽  
Troels Markussen ◽  
...  
Keyword(s):  
Quantum Transport ◽  
First Principles ◽  
Magnetic Multilayers ◽  
Spin Transfer ◽  
Transport Modeling ◽  
Spin Orbit

scholarly journals Intersystem crossing processes in the 2CzPN emitter: a DFT/MRCI study including vibrational spin–orbit interactions

2021 ◽  
Vol 23 (5) ◽  
pp. 3668-3678
Author(s):  
Angela Rodriguez-Serrano ◽  
Fabian Dinkelbach ◽  
Christel M. Marian
Keyword(s):  
Quantum Chemical Calculations ◽  
Quantum Chemical ◽  
Intersystem Crossing ◽  
Spin Orbit ◽  
Spin Orbit Interactions

Multireference quantum chemical calculations were performed in order to investigate the (reverse) intersystem crossing ((R)ISC) mechanisms of 4,5-di(9H-carbazol-9-yl)-phthalonitrile (2CzPN).

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