scholarly journals Integer quantum Hall effect in gapped single-layer graphene

2012 ◽  
Vol 86 (11) ◽  
Author(s):  
P. M. Krstajić ◽  
P. Vasilopoulos
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

2008 ◽  
Vol 77 (11) ◽  
pp. 113707 ◽  
Author(s):  
Satoru Masubuchi ◽  
Ken-ichi Suga ◽  
Masashi Ono ◽  
Koichi Kindo ◽  
Shojiro Takeyama ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Pulse Magnet ◽  
Layer Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009 ◽  
Vol 95 (22) ◽  
pp. 223108 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K Madiomanana ◽  
John Hankinson ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Publisher’s Note: Charge Fractionalization in the Integer Quantum Hall Effect [Phys. Rev. Lett. 112, 166801 (2014)]

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Hiroyuki Inoue ◽  
Anna Grivnin ◽  
Nissim Ofek ◽  
Izhar Neder ◽  
Moty Heiblum ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Charge Fractionalization
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