Growth mode and atomic structure of MnSi thin films on Si(111)

2012 ◽  
Vol 86 (11) ◽  
Author(s):  
B. Geisler ◽  
P. Kratzer ◽  
T. Suzuki ◽  
T. Lutz ◽  
G. Costantini ◽  
...  
2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  

2011 ◽  
Vol 52 (S1) ◽  
pp. 181-185 ◽  
Author(s):  
R. G. Valeev ◽  
A. N. Beltukov ◽  
F. Z. Gilmutdinov ◽  
É. A. Romanov ◽  
A. N. Deev ◽  
...  

2014 ◽  
Vol 20 (S3) ◽  
pp. 1662-1663 ◽  
Author(s):  
Kai Zweiacker ◽  
Can Liu ◽  
Joseph T. McKeown ◽  
Thomas LaGrange ◽  
Bryan W. Reed ◽  
...  

1991 ◽  
Vol 6 (11) ◽  
pp. 2264-2271 ◽  
Author(s):  
R. Ramesh ◽  
A. Inam ◽  
D.M. Hwang ◽  
T.S. Ravi ◽  
T. Sands ◽  
...  

We have examined the atomic structure of growth interfaces in thin films of Y–Ba–Cu–O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTiO3, the first layer appears to be either a BaO or a CuO2 plane while on LaAlO3 the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites.


2018 ◽  
Vol 656 ◽  
pp. 44-52
Author(s):  
Yu.A. Babanov ◽  
V.V. Vasin ◽  
D.A. Ponomarev ◽  
D.I. Devyaterikov ◽  
L.N. Romashev ◽  
...  

2013 ◽  
Vol 19 (S2) ◽  
pp. 1206-1207
Author(s):  
H. Mohammad Alipour ◽  
R.M. White ◽  
C. Eaton ◽  
J.A. Moyer ◽  
R. Engel-Herbret ◽  
...  
Keyword(s):  

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


1998 ◽  
Vol 83 (12) ◽  
pp. 7613-7617 ◽  
Author(s):  
Jian Z. Ren ◽  
Garry A. Rose ◽  
R. Stanley Williams ◽  
Corwin H. Booth ◽  
David K. Shuh

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.


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