scholarly journals Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide

2012 ◽  
Vol 86 (4) ◽  
Author(s):  
Rui Wang ◽  
Brian A. Ruzicka ◽  
Nardeep Kumar ◽  
Matthew Z. Bellus ◽  
Hsin-Ying Chiu ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Charge Carriers ◽  
Spatially Resolved ◽  
Spatially Resolved Studies

scholarly journals Spatially Resolved Studies of Local Massive Red Spiral Galaxies

2019 ◽  
Vol 883 (2) ◽  
pp. L36 ◽  
Author(s):  
Cai-Na Hao ◽  
Yong Shi ◽  
Yanmei Chen ◽  
Xiaoyang Xia ◽  
Qiusheng Gu ◽  
...  
Keyword(s):  
Spiral Galaxies ◽  
Spatially Resolved ◽  
Spatially Resolved Studies

Photogenerated Charge Carriers in Molybdenum Disulfide Quantum Dots with Enhanced Antibacterial Activity

2019 ◽  
Vol 11 (5) ◽  
pp. 4858-4866 ◽  
Author(s):  
Xin Tian ◽  
Yurong Sun ◽  
Sanhong Fan ◽  
Mary D. Boudreau ◽  
Chunying Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Antibacterial Activity ◽  
Molybdenum Disulfide ◽  
Charge Carriers

Glass calorimeter for spatially resolved studies in arc lamps

1986 ◽  
Vol 57 (3) ◽  
pp. 478-482 ◽  
Author(s):  
J. B. Pearson ◽  
F. L. Curzon
Keyword(s):  
Spatially Resolved ◽  
Spatially Resolved Studies

Spatially Resolved Studies of DIBs in Galaxies outside the Local Group

2018 ◽  
Vol 14 (A30) ◽  
pp. 398-399
Author(s):  
Ana Monreal-Ibero ◽  
Peter M. Weilbacher ◽  
Martin Wendt
Keyword(s):  
Local Group ◽  
Spatially Resolved ◽  
Spatially Resolved Studies

Unraveling Deterministic Mesoscopic Polarization Switching Mechanisms: Spatially Resolved Studies of a Tilt Grain Boundary in Bismuth Ferrite

2009 ◽  
Vol 19 (13) ◽  
pp. 2053-2063 ◽  
Author(s):  
Brian J. Rodriguez ◽  
Samrat Choudhury ◽  
Y. H. Chu ◽  
Abhishek Bhattacharyya ◽  
Stephen Jesse ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Bismuth Ferrite ◽  
Polarization Switching ◽  
Spatially Resolved ◽  
Tilt Grain Boundary ◽  
Spatially Resolved Studies

scholarly journals Influence of lattice deformations on the electronic structure of the molybdenum disulfide monolayer

2021 ◽  
Vol 65 (1) ◽  
pp. 40-45
Author(s):  
A. V. Krivosheeva ◽  
V. L. Shaposhnikov ◽  
V. E. Borisenko
Keyword(s):  
Electronic Structure ◽  
Crystal Lattice ◽  
Band Gap ◽  
Molybdenum Disulfide ◽  
Theoretical Modeling ◽  
Charge Carriers ◽  
Interband Transitions ◽  
Nanoelectronic Devices ◽  
New Generation ◽  
Potential Use

The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible

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