Spectroscopic investigations of Eu3+:Y2SiO5for quantum memory applications

2012 ◽  
Vol 85 (11) ◽  
Author(s):  
B. Lauritzen ◽  
N. Timoney ◽  
N. Gisin ◽  
M. Afzelius ◽  
H. de Riedmatten ◽  
...  
Keyword(s):  
Quantum Memory ◽  
Spectroscopic Investigations ◽  
Memory Applications

Spectroscopic investigations of 142Nd3+:YVO4 for quantum memory applications

2020 ◽  
Vol 37 (6) ◽  
pp. 1653
Author(s):  
Peng-Jun Liang ◽  
Xiao Liu ◽  
Pei-Yun Li ◽  
Zong-Quan Zhou ◽  
Chuan-Feng Li ◽  
...  
Keyword(s):  
Quantum Memory ◽  
Spectroscopic Investigations ◽  
Memory Applications

Shallow donor qubits in ZnO for quantum memory applications

2021 ◽  
Author(s):  
Christian Zimmermann ◽  
Vasilis Niaouris ◽  
Maria L. Viitaniemi ◽  
Kai-Mei C. Fu
Keyword(s):  
Shallow Donor ◽  
Quantum Memory ◽  
Memory Applications

scholarly journals Light trapping in high-density ultracold atomic gases for quantum memory applications

2010 ◽  
Vol 57 (19) ◽  
pp. 1833-1840 ◽  
Author(s):  
I.M. Sokolov ◽  
D.V. Kupriyanov ◽  
R.G. Olave ◽  
M.D. Havey
Keyword(s):  
Light Trapping ◽  
High Density ◽  
Quantum Memory ◽  
Atomic Gases ◽  
Ultracold Atomic Gases ◽  
Memory Applications

Spectroscopic investigations of a waveguide for photon-echo quantum memory

2010 ◽  
Vol 130 (9) ◽  
pp. 1586-1593 ◽  
Author(s):  
N. Sinclair ◽  
E. Saglamyurek ◽  
M. George ◽  
R. Ricken ◽  
C. La Mela ◽  
...  
Keyword(s):  
Photon Echo ◽  
Quantum Memory ◽  
Spectroscopic Investigations

scholarly journals Analysis of Controlled Rabi Flopping in a Double Rephasing Photon Echo Scheme for Quantum Memories

Entropy ◽  
2020 ◽  
Vol 22 (9) ◽  
pp. 1007
Author(s):  
Rahmat Ullah ◽  
Byoung S. Ham
Keyword(s):  
Excited State ◽  
Phase Shift ◽  
Quantum Coherence ◽  
Photon Echo ◽  
Phase Control ◽  
Quantum Memory ◽  
Photon Echoes ◽  
Memory Applications

A double rephasing scheme of a photon echo is analyzed for inversion-free photon echo-based quantum memories using controlled Rabi flopping, where the Rabi flopping is used for phase control of collective atom coherence. Unlike the rephasing-caused π-phase shift in a single rephasing scheme, the control Rabi flopping between the excited state and an auxiliary third state induces coherence inversion. Thus, the absorptive photon echo in a double rephasing scheme can be manipulated to be emissive. Here, we present a quantum coherence control of atom phases in a double rephasing photon echo scheme for emissive photon echoes for quantum memory applications.

Er3+ doped Y2O3 transparent ceramic for quantum memory applications

2018 ◽  
Author(s):  
Jun Yang ◽  
Haitao Zhang ◽  
Stuart Gray ◽  
Thomas D. Ketcham ◽  
Daniel A. Nolan
Keyword(s):  
Quantum Memory ◽  
Transparent Ceramic ◽  
Memory Applications

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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