Analysis of exact vertex function for improving on the GWΓscheme for first-principles calculation of electron self-energy

2011 ◽  
Vol 84 (24) ◽  
Author(s):  
Hideaki Maebashi ◽  
Yasutami Takada
2011 ◽  
Vol 1370 ◽  
Author(s):  
Eiji Kamiyama ◽  
Koji Sueoka

ABSTRACTThe impact of dimer formations at the surfaces of the internal atoms of silicon (Si) thin film was evaluated by examining silicon-on-insulator (SOI) and plate models. In the SOI models, a dimer formation was modeled at one side of the Si thin film. The plate models had two dimers at each surface, which had been considered as a Si bulk model in previous studies. First principles calculation showed that the deviations of Si atoms from the first to fourth layers of the SOI models did not differ remarkably from those of the plate models. The internal atoms deeper than the fifth layer showed near-zero deviation in some of the SOI models and had evident non-zero deviation in the other SOI models. All the SOI and plate models showed lower Si atom self-energy than in the Si bulk. The layer-to-layer distance of internal atoms in the films became longer than that of atoms in Si bulk. These results indicated that (i) Si films with dimer surfaces are relaxed by deviations in the whole film, and (ii) even the thick plate model with 32 layers dose not reveal the nature of Si bulk.


1999 ◽  
Vol 579 ◽  
Author(s):  
I. Campillo ◽  
A. Rubio ◽  
J. M. Pitarke ◽  
P. M. Echenique

ABSTRACTFirst-principles calculations of the inelastic lifetime of low-energy electrons in Al. Cu and Au are reported. Quasiparticle damping rates are evaluated from the knowledge of the electron self-energy, which we compute within the GW approximation. Inelastic lifetimes are then obtained along various directions of the electron wave vector, with full inclusion of the band structure of the solid. Average lifetimes are also reported, as a function of the electron energy. In Al splitting of the band structure over the Fermi level yields electron lifetimes that are smaller than those of electrons in a free-electron gas. In Cu and Au, a major contribution from d electrons participating in the screening of electron-electron interactions yields electron lifetimes which are well above those of electrons in a free-electron gas with the electron density equal to that of valence (4s1 and 6s1 respectively) electrons.


1981 ◽  
Vol 42 (C6) ◽  
pp. C6-625-C6-627 ◽  
Author(s):  
P. E. Van Camp ◽  
V. E. Van Doren ◽  
J. T. Devreese

2021 ◽  
Vol 27 (6) ◽  
Author(s):  
Wen-Guang Li ◽  
Yun-Dan Gan ◽  
Zhi-Xin Bai ◽  
Ming-Jian Zhang ◽  
Fu-Sheng Liu ◽  
...  

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