scholarly journals Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
YenTing Chiu ◽  
Medini Padmanabhan ◽  
T. Gokmen ◽  
J. Shabani ◽  
E. Tutuc ◽  
...  
2007 ◽  
Vol 76 (23) ◽  
Author(s):  
T. Gokmen ◽  
Medini Padmanabhan ◽  
E. Tutuc ◽  
M. Shayegan ◽  
S. De Palo ◽  
...  

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
A. Tsukazaki ◽  
A. Ohtomo ◽  
M. Kawasaki ◽  
S. Akasaka ◽  
H. Yuji ◽  
...  

2004 ◽  
Vol 22 (1-3) ◽  
pp. 228-231 ◽  
Author(s):  
J. Zhu ◽  
H.L. Stormer ◽  
L.N. Pfeiffer ◽  
K.W. Baldwin ◽  
K.W. West

2000 ◽  
Vol 76 (24) ◽  
pp. 3600-3602 ◽  
Author(s):  
Amlan Majumdar ◽  
L. P. Rokhinson ◽  
D. C. Tsui ◽  
L. N. Pfeiffer ◽  
K. W. West

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 489-493
Author(s):  
H. Kosina ◽  
C. Troger

Nonparabolicity effects in two-dimensional electron systems are quantitatively analyzed. A formalism has been developed which allows to incorporate a nonparabolic bulk dispersion relation into the Schrödinger equation. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum. Each subband is parametrized by its energy, effective mass and a subband nonparabolicity coefficient. The formalism is implemented in a one-dimensional Schrödinger-Poisson solver which is applicable both to silicon inversion layers and heterostructures.


2008 ◽  
Vol 323 (10) ◽  
pp. 2624-2632 ◽  
Author(s):  
F. Cannata ◽  
M.V. Ioffe ◽  
D.N. Nishnianidze

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