scholarly journals Energy shift and wave function overlap of metal-organic interface states

2011 ◽  
Vol 84 (8) ◽  
Author(s):  
M. Marks ◽  
N. L. Zaitsev ◽  
B. Schmidt ◽  
C. H. Schwalb ◽  
A. Schöll ◽  
...  
Keyword(s):  
Wave Function ◽  
Energy Shift ◽  
Interface States ◽  
Metal Organic

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

scholarly journals Inelastic decay of electrons in Shockley-type metal-organic interface states

2015 ◽  
Vol 92 (23) ◽  
Author(s):  
S. S. Tsirkin ◽  
N. L. Zaitsev ◽  
I. A. Nechaev ◽  
R. Tonner ◽  
U. Höfer ◽  
...  
Keyword(s):  
Interface States ◽  
Metal Organic

Interface dipole at metal-organic interfaces: Contribution of metal induced interface states

2009 ◽  
Vol 94 (11) ◽  
pp. 113304 ◽  
Author(s):  
C. S. Lee ◽  
J. X. Tang ◽  
Y. C. Zhou ◽  
S. T. Lee
Keyword(s):  
Interface States ◽  
Interface Dipole ◽  
Organic Interfaces ◽  
Metal Organic

Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells

2005 ◽  
Vol 892 ◽  
Author(s):  
Xiyao Zhang ◽  
Ian Patrick Wellenius ◽  
Ailing Cai ◽  
John Muth ◽  
John Roberts ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Surface Recombination ◽  
Surface Preparation ◽  
Energy Shift ◽  
Surface Recombination Velocity ◽  
Metal Organic ◽  
Recombination Velocity

AbstractSurface quantum wells of gallium nitride have been grown by Metal Organic Vapor Phase Epitaxy on top of AlGaN/GaN heterostructures. One boundary of the quantum well is vacuum (or air)/GaN interface, the other is GaN/AlGaN interface, and the width of the quantum well is the thickness of gallium nitride cap, and quantum confinement is demonstrate by the energy shift in photoluminescence, and cathodoluminescence as the GaN cap thickness is varied. The efficiency of the quantum well emission is sensitive to the surface environment and resulting surface recombination velocity. In this study the surface is altered by surface preparation treatments and resulting in changes in the luminescence. The changes in the efficiency of quantum well luminescence with surface treatments are attributed to changes in surface recombination velocity and surface electric fields.

Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions

2021 ◽  
Author(s):  
Lingmei Zhang ◽  
Yuanyuan Miao ◽  
Zhipeng Cao ◽  
Shuai Qiu ◽  
Guangping Zhang ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Energy Shift ◽  
Interface States ◽  
Molecular Junctions ◽  
Large Current ◽  
Spin Dependent Transport ◽  
Dependent Transport ◽  
Hybrid Interface ◽  
Current Spin Polarization

Abstract Based on first-principles calculations, the bias-induced evolution of hybrid interface states in π-conjugated tricene and insulating octane magnetic molecular junctions is investigated. Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions. The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias dependent. The transport calculations demonstrate that in the π-conjugated tricene junction, the bias-dependent hybrid interface states work efficiently for large current, current spin polarization, and distinct tunneling magnetoresistance. But in the insulating octane junction, the spin-dependent transport via the hybrid interface states is inhibited, which is only slightly disturbed by the bias. This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices, and the underlying role of molecular conjugated orbitals in the transport ability of hybrid interface states.

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