Hybridization between the unoccupied Shockley surface state and bulk electronic states on Cu(111)

2011 ◽  
Vol 84 (7) ◽  
Author(s):  
A. Akin Ünal ◽  
Christian Tusche ◽  
Safia Ouazi ◽  
Sebastian Wedekind ◽  
Cheng-Tien Chiang ◽  
...  
2017 ◽  
Vol 19 (28) ◽  
pp. 18646-18651 ◽  
Author(s):  
Hirotaka Mizushima ◽  
Harunobu Koike ◽  
Kenta Kuroda ◽  
Yukiaki Ishida ◽  
Mitsuhiro Nakayama ◽  
...  

The modification of the Au(111) Shockley surface state (SS) by an n-alkane molecule (n-tetratetracontane) monolayer was observed by angle-resolved ultraviolet photoemission spectroscopy.


2001 ◽  
Vol 63 (19) ◽  
Author(s):  
R. Courths ◽  
M. Lau ◽  
T Scheunemann ◽  
H. Gollisch ◽  
R. Feder

2007 ◽  
Vol 88 (3) ◽  
pp. 555-557 ◽  
Author(s):  
M. Becker ◽  
S. Crampin ◽  
R. Berndt

1999 ◽  
Vol 06 (06) ◽  
pp. 1151-1157 ◽  
Author(s):  
L. DUDA ◽  
L. S. O. JOHANSSON ◽  
B. REIHL ◽  
H. W. YEOM ◽  
S. HARA ◽  
...  

We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the [Formula: see text] direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting a pz character, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the 2×1 and c(4×2) reconstructions.


2009 ◽  
Vol 79 (11) ◽  
Author(s):  
A. Scheybal ◽  
K. Müller ◽  
R. Bertschinger ◽  
M. Wahl ◽  
A. Bendounan ◽  
...  

2009 ◽  
Vol 80 (4) ◽  
Author(s):  
I. Yu. Sklyadneva ◽  
R. Heid ◽  
V. M. Silkin ◽  
A. Melzer ◽  
K. P. Bohnen ◽  
...  

2004 ◽  
Vol 69 (24) ◽  
Author(s):  
M. Hoesch ◽  
M. Muntwiler ◽  
V. N. Petrov ◽  
M. Hengsberger ◽  
L. Patthey ◽  
...  

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