Quantum transport through a transverse quantum-dot shuttle

2011 ◽  
Vol 83 (19) ◽  
Author(s):  
Z. T. Jiang ◽  
C. L. Yu ◽  
R. M. Zhao ◽  
J. Lü ◽  
Q. Z. Han
2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Oliver Kaestle ◽  
Emil Vosmar Denning ◽  
Jesper Mørk ◽  
Andreas Knorr ◽  
Alexander Carmele

2007 ◽  
Vol 7 (2) ◽  
pp. 198-204 ◽  
Author(s):  
Procolo Lucignano ◽  
Piotr Stefański ◽  
Arturo Tagliacozzo ◽  
Bogdan R. Bułka

2019 ◽  
Vol 99 (3) ◽  
Author(s):  
Lian-Lian Zhang ◽  
Ze-Zhong Li ◽  
Guo-Hui Zhan ◽  
Guang-Yu Yi ◽  
Wei-Jiang Gong

2016 ◽  
Vol 248 ◽  
pp. 134-139
Author(s):  
Sha-Sha Ke ◽  
Ling-E. Miao ◽  
Zhen Guo ◽  
Yong Guo ◽  
Huai-Wu Zhang ◽  
...  

2015 ◽  
Vol 160 (1) ◽  
pp. 127-134
Author(s):  
Lijuan Jiang ◽  
Ruiyang Yuan ◽  
Xin Zhao ◽  
Hui Yan

2001 ◽  
Vol 63 (23) ◽  
Author(s):  
W. Z. Shangguan ◽  
T. C. Au Yeung ◽  
Y. B. Yu ◽  
C. H. Kam

2007 ◽  
Vol 76 (24) ◽  
Author(s):  
Nenad Vukmirović ◽  
Zoran Ikonić ◽  
Dragan Indjin ◽  
Paul Harrison

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 165-172 ◽  
Author(s):  
D. K. Ferry ◽  
J. R. Barker

Quantum transport is becoming more significant as device size shrinks. For example, as device sizes are scaled below 0.1 μm, the number of impurities becomes quite small, so that they are no longer homogeneously distributed throughout the device volume and the carriers are localized into quantum boxes, in that self-energy corrections produced by locally high carrier densities will lead to quantum dot formation. This leads to the need to discuss transport through an array of such quantum structures. Here, we discuss several issues which must be considered in treating the transport through such devices.


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