Critical current noise investigations in underdamped Josephson devices

2011 ◽  
Vol 83 (9) ◽  
Author(s):  
C. Granata ◽  
A. Vettoliere ◽  
R. Russo ◽  
M. Russo ◽  
B. Ruggiero
Keyword(s):  
Critical Current ◽  
Current Noise ◽  
Josephson Devices

Low-frequency critical current noise in Josephson junctions induced by temperature fluctuations

2012 ◽  
Vol 101 (9) ◽  
pp. 092601 ◽  
Author(s):  
S. M. Anton ◽  
C. D. Nugroho ◽  
J. S. Birenbaum ◽  
S. R. O’Kelley ◽  
V. Orlyanchik ◽  
...  
Keyword(s):  
Critical Current ◽  
Josephson Junctions ◽  
Low Frequency ◽  
Temperature Fluctuations ◽  
Current Noise

scholarly journals Microscopic model of critical current noise in Josephson-junction qubits: Subgap resonances and Andreev bound states

2009 ◽  
Vol 80 (9) ◽  
Author(s):  
Rogério de Sousa ◽  
K. Birgitta Whaley ◽  
Theresa Hecht ◽  
Jan von Delft ◽  
Frank K. Wilhelm
Keyword(s):  
Josephson Junction ◽  
Critical Current ◽  
Bound States ◽  
Microscopic Model ◽  
Current Noise ◽  
Andreev Bound States

Localized laser trimming of critical current in niobium based Josephson devices

2007 ◽  
Vol 90 (23) ◽  
pp. 232503 ◽  
Author(s):  
C. Granata ◽  
A. Vettoliere ◽  
L. Petti ◽  
M. Rippa ◽  
B. Ruggiero ◽  
...  
Keyword(s):  
Critical Current ◽  
Josephson Devices

scholarly journals Trimming of critical current in niobium Josephson devices by laser annealing

2008 ◽  
Vol 97 ◽  
pp. 012110
Author(s):  
C Granata ◽  
A Vettoliere ◽  
L Petti ◽  
M Rippa ◽  
B Ruggiero ◽  
...  
Keyword(s):  
Critical Current ◽  
Laser Annealing ◽  
Josephson Devices

scholarly journals Low-frequency critical current noise in graphene Josephson junctions in the open-circuit gate voltage limit

2021 ◽  
Author(s):  
Francesco M. D. Pellegrino ◽  
Giuseppe Falci ◽  
Elisabetta Paladino
Keyword(s):  
Temperature Dependence ◽  
Critical Current ◽  
Gate Voltage ◽  
Josephson Junctions ◽  
Flicker Noise ◽  
Low Frequency ◽  
Wide Frequency Range ◽  
Open Circuit ◽  
Current Noise ◽  
Voltage Limit

AbstractWe investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $$T^{-3}$$ T - 3 , strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.

scholarly journals Investigation of Current Noise in Underdamped Josephson Devices by Switching Current Measurements

2012 ◽  
Vol 36 ◽  
pp. 371-376 ◽  
Author(s):  
C. Granata ◽  
R. Russo ◽  
A. Vettoliere ◽  
L. Longobardi ◽  
P. Silvestrini ◽  
...  
Keyword(s):  
Current Noise ◽  
Josephson Devices ◽  
Switching Current

A Josephson Junction with h-BN tunnel barrier: observation of low critical current noise

2021 ◽  
Author(s):  
Jifa Tian ◽  
Luis A. Jauregui ◽  
Chris Wilen ◽  
Albert Rigosi ◽  
David B Newell ◽  
...  
Keyword(s):  
Josephson Junction ◽  
Critical Current ◽  
Current Noise ◽  
Tunnel Barrier

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Sign in / Sign up

Export Citation Format

Share Document