scholarly journals Fine structure and size dependence of exciton and biexciton optical spectra in CdSe nanocrystals

2010 ◽  
Vol 82 (24) ◽  
Author(s):  
Marek Korkusinski ◽  
Oleksandr Voznyy ◽  
Pawel Hawrylak
MRS Advances ◽  
2018 ◽  
Vol 3 (14) ◽  
pp. 711-716 ◽  
Author(s):  
Peter C. Sercel ◽  
Andrew Shabaev ◽  
Alexander L. Efros

ABSTRACTWe have analysed the effect of symmetry breaking on the optical properties of semiconductor nanocrystals due to doping by charged impurities. Using doped CdSe nanocrystals as an example, we show the effects of a Coulomb center on the exciton fine-structure and optical selection rules using symmetry theory and then quantify the effect of symmetry breaking on the exciton fine structure, modelling the charged center using a multipole expansion. The model shows that the presence of a Coulomb center breaks the nanocrystal symmetry and affects its optical properties through mixing and shifting of the hole spin and parity sublevels. This symmetry breaking, particularly for positively charged centers, shortens the radiative lifetime of CdSe nanocrystals even at room temperature, in qualitative agreement with the increase in PL efficiency observed in CdSe nanocrystals doped with positive Ag charge centers [A. Sahu et.al., Nano Lett. 12, 2587, (2012)]. The effect of the charged center on the photoluminescence and the absorption spectra is shown, with and without the presence of compensating charges on the nanocrystal surface. While spectra of individual nanocrystals are expected to shift and broaden with the introduction of a charged center, configuration averaging and inhomogeneous broadening are shown to wash out these effects. The presence of compensating charges at the NC surface also serves to stabilize the band edge transition energies relative to NCs with no charge centers.


2019 ◽  
Vol 123 (51) ◽  
pp. 31286-31293 ◽  
Author(s):  
Elisabetta Collini ◽  
Hugo Gattuso ◽  
Luca Bolzonello ◽  
Andrea Casotto ◽  
Andrea Volpato ◽  
...  

1999 ◽  
Vol 12 (3) ◽  
pp. 128-134 ◽  
Author(s):  
G-J Babonas ◽  
L Leonyuk ◽  
A Reza ◽  
V Maltsev ◽  
L Dapkus

2004 ◽  
Vol 831 ◽  
Author(s):  
K.P. O'Donnell ◽  
V. Katchkanov ◽  
K. Wang ◽  
R.W. Martin ◽  
P.R. Edwards ◽  
...  

ABSTRACTThis presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.


1974 ◽  
Vol 121 (11) ◽  
pp. 1475 ◽  
Author(s):  
F. M. Ryan ◽  
W. Lehmann ◽  
D. W. Feldman ◽  
J. Murphy

2009 ◽  
Vol 113 (43) ◽  
pp. 18608-18613 ◽  
Author(s):  
Z. H. Sun ◽  
H. Oyanagi ◽  
M. Uehara ◽  
H. Nakamura ◽  
K. Yamashita ◽  
...  

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