Indications of superconductivity at somewhat elevated temperatures in strontium titanate subjected to high electric fields

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
Yen-Hsiang Lin ◽  
Yu Chen ◽  
A. M. Goldman
Keyword(s):  
Strontium Titanate ◽  
Electric Fields ◽  
Elevated Temperatures ◽  
High Electric Fields

Structures and electrical properties of barium strontium titanate thin films grown by multi-ion-beam reactive sputtering technique

1995 ◽  
Vol 10 (3) ◽  
pp. 708-726 ◽  
Author(s):  
C-J. Peng ◽  
S.B. Krupanidhi
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Strontium Titanate ◽  
Electric Fields ◽  
Barium Strontium Titanate ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Type I ◽  
Type Ii ◽  
Barium Strontium

The structure and electrical properties of multi-ion beam reactive sputter (MIBERS) deposited barium strontium titanate (BST) films were characterized in terms of Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness, doping concentration, and secondary low-energy oxygen ion bombardment. Films deposited onto unheated substrates, followed by annealing at 700 °C showed lower dielectric constant (<200), compared to a dielectric constant of about 560 for those deposited at elevated temperatures, probably due to reduced voids. Two types of microstructures (type I and type II) were observed depending on the incipient phase of the as-grown films, which also led to two types of time domain dielectric response, Curie-von Schweidler and Debye type, respectively. The current-voltage (I-V) characteristics of type II films doped with high donor concentration showed a bulk space-charge-limited conduction (SCLC) with discrete shallow traps embedded in a trap-distributed background at high electric fields. The I-V characteristics of bombarded films deposited at higher substrate temperatures showed promising results of lower leakage currents and trap densities.

Preparation of Barium Titanate/Strontium Titanate Nanocube Accumulation Ceramics and their Dielectric Property

2013 ◽  
Vol 582 ◽  
pp. 169-173
Author(s):  
Shuhei Tsukamoto ◽  
Shogo Iwatsuki ◽  
Ichiro Fujii ◽  
Kouichi Nakashima ◽  
Satoshi Wada
Keyword(s):  
Dielectric Properties ◽  
Dielectric Property ◽  
Barium Titanate ◽  
Strontium Titanate ◽  
Electric Fields ◽  
Epitaxial Interface ◽  
High Electric Fields

The barium titanate (BaTiO3, BT) epitaxially coated strontium titanate (SrTiO3, ST) (BT/ST) nanocube accumulation ceramics were successfully prepared by a sorbothermal method, with epitaxial interface between ST and BT, and as reference, the BT/BT nanocube accumulation ceramics were also preapred. These dielectric properties were measured for the both accumulation ceramics, and it was clearly obserbed that there was significiant difference between BT/ST and BT/BT nanocube accumulation ceramics in the dielectric properties under low and high electric fields, and the origin of the result was discussed.

scholarly journals Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures

2005 ◽  
Vol 10 ◽  
pp. 409-412 ◽  
Author(s):  
V I Turchanikov ◽  
A N Nazarov ◽  
V S Lysenko ◽  
J Carreras ◽  
B Garrido
Keyword(s):  
Electric Fields ◽  
Elevated Temperatures ◽  
Charge Trapping ◽  
Memory Devices ◽  
High Electric Fields

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

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