scholarly journals Large out-of-plane spin polarization in a spin-splitting one-dimensional metallic surface state on Si(557)-Au

2010 ◽  
Vol 82 (16) ◽  
Author(s):  
Taichi Okuda ◽  
Koji Miyamaoto ◽  
Yasuo Takeichi ◽  
Hirokazu Miyahara ◽  
Manami Ogawa ◽  
...  
2012 ◽  
Vol 24 (9) ◽  
pp. 092001 ◽  
Author(s):  
Y Ohtsubo ◽  
S Hatta ◽  
H Okuyama ◽  
T Aruga

2003 ◽  
Vol 91 (3) ◽  
Author(s):  
Taizo Kanagawa ◽  
Rei Hobara ◽  
Iwao Matsuda ◽  
Takehiro Tanikawa ◽  
Akiko Natori ◽  
...  

Hyomen Kagaku ◽  
2014 ◽  
Vol 35 (8) ◽  
pp. 426-431
Author(s):  
Koichiro YAJI ◽  
Fumio KOMORI

2010 ◽  
Vol 1 (1) ◽  
Author(s):  
Koichiro Yaji ◽  
Yoshiyuki Ohtsubo ◽  
Shinichiro Hatta ◽  
Hiroshi Okuyama ◽  
Koji Miyamoto ◽  
...  

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
L. V. Bondarenko ◽  
D. V. Gruznev ◽  
A. A. Yakovlev ◽  
A. Y. Tupchaya ◽  
D. Usachov ◽  
...  

Author(s):  
Xiao Li ◽  
Hua Chen ◽  
Qian Niu

Absence of spatial inversion symmetry allows a nonequilibrium spin polarization to be induced by electric currents, which, in two-dimensional systems, is conventionally analyzed using the Rashba model, leading to in-plane spin polarization. Given that the material realizations of out-of-plane current-induced spin polarization (CISP) are relatively fewer than that of in-plane CISP, but important for perpendicular-magnetization switching and electronic structure evolution, it is highly desirable to search for new prototypical materials and mechanisms to generate the out-of-plane carrier spin and promote the study of CISP. Here, we propose that an out-of-plane CISP can emerge in ferromagnetic transition-metal dichalcogenide monolayers. Taking monolayer VSe2 and VTe2 as examples, we calculate the out-of-plane CISP based on linear-response theory and first-principles methods. We deduce a general low-energy model for easy-plane ferromagnetic transition-metal dichalcogenide monolayers and find that the out-of-plane CISP is due to an in-plane magnetization together with intrinsic spin–orbit coupling inducing an anisotropic out-of-plane spin splitting in the momentum space. The CISP paves the way for magnetization rotation and electric control of the valley quantum number.


2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.


2015 ◽  
Vol 114 (6) ◽  
Author(s):  
A. Takayama ◽  
T. Sato ◽  
S. Souma ◽  
T. Oguchi ◽  
T. Takahashi

2013 ◽  
Vol 38 (12) ◽  
pp. 2005 ◽  
Author(s):  
Feng Tian ◽  
Guangya Zhou ◽  
Yu Du ◽  
Fook Siong Chau ◽  
Jie Deng ◽  
...  

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